A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors von Ajaykumar, Arjun, Xing Zhou, Siau Ben Chiah

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A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects von Syamal, Binit, Xing Zhou, Ben Chiah, Siau, Jesudas, Anand M., Arulkumaran, Subramaniam, Geok Ing Ng

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Quasi-2D Surface-Potential-Based Critical Length for Drift-Diffusion von Ajaykumar, Arjun, Xing Zhou, Siau Ben Chiah, Syamal, Binit

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In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations von Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Ben Chiah, Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene

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A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs von Guan Huei See, Xing Zhou, Chandrasekaran, K., Siau Ben Chiah, Zhaomin Zhu, Chengqing Wei, Shihuan Lin, Guojun Zhu, Guan Hui Lim

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Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs von Ajaykumar, Arjun, Xing Zhou, Ben Chiah, Siau, Syamal, Binit

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Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials von Chiah, Siau Ben, Zhou, Xing

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Implicit Analytical Surface/Interface Potential Solutions for Modeling Strained-Si MOSFETs von Chandrasekaran, K., Xing Zhou, Siau Ben Chiah, Guan Huei See, Rustagi, S.C.

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Compact Zero-Temperature Coefficient Modeling Approach for MOSFETs Based on Unified Regional Modeling of Surface Potential von Chiah, Siau Ben, Zhou, Xing, Yuan, Li

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High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers von Khai, Loke Wan, Yue, Wang, Kwang Hong, Lee, Zhihong, Liu, Hanlin, Xie, Siau Ben, Chiah, Eng Kian, Kenneth Lee, Xing, Zhou, Tan, Chuan Seng, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon

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Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates von Shangguan, W.Z., Xing Zhou, Chandrasekaran, K., Zhaomin Zhu, Rustagi, S.C., Chiah, S.B., Guan Huei See

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Unification of MOS compact models with the unified regional modeling approach von Zhou, Xing, Zhu, Guojun, See, Guan Huei, Chandrasekaran, Karthik, Chiah, Siau Ben, Lim, Khee Yong

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Physics-based single-piece charge model for strained-Si MOSFETs von Chandrasekaran, K., Xing Zhou, Chiah, S.B., Shangguan, W., Guan Huei See

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Extraction of physical parameters of strained silicon MOSFETs from C-V measurement von Chandrasekaran, K., Xing Zhou, Siau Ben Chiah, Wangzuo Shangguan, Guan Huei See, Bera, L.K., Balasubramanian, N., Rustagi, S.C.

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Effect of substrate doping on the capacitance-Voltage characteristics of strained-silicon pMOSFETs von Chandrasekaran, K., Xing Zhou, Chiah, S.B., Shangguan, W., Guan Huei See, Bera, L.K., Balasubramanian, N., Rustagi, S.C.

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Unification of MOS compact models with the unified regional modeling approach : Computational Electronics in Asia and Selected Papers from IWCE 2009 in Beijing von XING ZHOU, GUOJUN ZHU, GUAN HUEI SEE, CHANDRASEKARAN, Karthik, SIAU BEN CHIAH, KHEE YONG LIM

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Source-drain symmetry in unified regional MOSFET model von Chiah, S.B., Xing Zhou, Khee Yong Lim, Lap Chan, Chu, S.

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DISPLAY SYSTEM AND ELECTRONIC DEVICE HAVING THE SAME von FITZGERALD, Eugene A, ZHANG, Li, CHUA, Soo Jin, CHIAH, Siau Ben, SHU, Wei, QU, Yong, LEE, Kenneth, Eng Kian, CHANG, Joseph Sylvester

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A METHOD OF FORMING A MULTILAYER STRUCTURE FOR A PIXELATED DISPLAY AND A MULTILAYER STRUCTURE FOR A PIXELATED DISPLAY von ZHANG, Li, CHUA, Soo Jin, FITZGERALD, Eugene A, LEE, Eng Kian, Kenneth, CHIAH, Siau Ben, SHU, Wei, WANG, Bing, QU, Yong, CHANG, Joseph Sylvester, LEE, Kwang Hong

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Subpixel circuitry for driving an associated light element, and method, display system and electronic device relating to same von Shu, Wei, Chiah, Siau Ben, Chang, Joseph Sylvester, Chua, Soo Jin, Fitzgerald, Eugene A, Zhang, Li, Lee, Eng Kian Kenneth, Qu, Yong

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