Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications von Tsung-Ming Tsai, Kuan-Chang Chang, Ting-Chang Chang, Yong-En Syu, Siang-Lan Chuang, Geng-Wei Chang, Guan-Ru Liu, Min-Chen Chen, Hui-Chun Huang, Shih-Kun Liu, Ya-Hsiang Tai, Der-Shin Gan, Ya-Liang Yang, Tai-Fa Young, Bae-Heng Tseng, Kai-Huang Chen, Ming-Jinn Tsai, Cong Ye, Hao Wang, Sze, S. M.

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Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO 2 fluid treatment von Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Syu, Yong-En, Wang, Chia-C., Chuang, Siang-Lan, Li, Cheng-Hua, Gan, Der-Shin, Sze, Simon M.

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Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment von Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Syu, Yong-En, Wang, Chia-C., Chuang, Siang-Lan, Li, Cheng-Hua, Gan, Der-Shin, Sze, Simon M.

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The Effect of Silicon Oxide Based RRAM with Tin Doping von Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Syu, Yong-En, Chuang, Siang-Lan, Li, Cheng-Hua, Gan, Der-Shin, Sze, Simon M.

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Publisher's Note: The Effect of Silicon Oxide Based RRAM with Tin Doping [Electrochem. Solid-State Lett., 15, H65 (2012)] von Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Syu, Yong-En, Liao, Kuo-Hsiao, Chuang, Siang-Lan, Li, Cheng-Hua, Gan, Der-Shin, Sze, Simon M.

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