High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition von Kumar, Dayanand, Chand, Umesh, Wen Siang, Lew, Tseng, Tseung-Yuen

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Large spin Hall angle enhanced by nitrogen incorporation in Pt films von Xu, Zhan, Wong, Grayson Dao Hwee, Tang, Jiaxuan, Liu, Er, Gan, Weiliang, Xu, Feng, Lew, Wen Siang

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Spin-orbit torque induced magnetization anisotropy modulation in Pt/(Co/Ni)4/Co/IrMn heterostructure von Engel, Christian, Goolaup, Sarjoosing, Luo, Feilong, Gan, Weiliang, Lew, Wen Siang

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ZrN-Based Flexible Resistive Switching Memory von Kumar, Dayanand, Chand, Umesh, Siang, Lew Wen, Tseng, Tseung-Yuen

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Bilayer skyrmion dynamics on a magnetic anisotropy gradient von Ang, Calvin Ching Ian, Gan, Weiliang, Lew, Wen Siang

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Efficient spin–orbit torque magnetization switching by reducing domain nucleation energy von Jin, Tianli, Ang, Calvin, Wang, Xuan, Siang Lew, Wen, Piramanayagam, S.N.

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Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons von Lin, Weinan, Li, Lei, Doğan, Fatih, Li, Changjian, Rotella, Hélène, Yu, Xiaojiang, Zhang, Bangmin, Li, Yangyang, Lew, Wen Siang, Wang, Shijie, Prellier, Wilfrid, Pennycook, Stephen J., Chen, Jingsheng, Zhong, Zhicheng, Manchon, Aurelien, Wu, Tom

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Gateable Skyrmion Transport via Field-induced Potential Barrier Modulation von Fook, Hiu Tung, Gan, Wei Liang, Lew, Wen Siang

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Antiferromagnetic skyrmion repulsion based artificial neuron device von Bindal, Namita, Ian, Calvin Ang Chin, Lew, Wen Siang, Kaushik, Brajesh Kumar

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The influence of Ti ultrathin insertion layer on the effective magnetic damping and effective spin Hall angle von Xu, Zhan, Wong, Grayson Dao Hwee, Tang, Jiaxuan, Liu, Er, Coester, Birte, Xu, Feng, Bian, Leixiang, Lew, Wen Siang

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Enhancement of zero-field skyrmion density in [Pt/Co/Fe/Ir]2 multilayers at room temperature by the first-order reversal curve von Ma, Mangyuan, Ang, Calvin Ching Ian, Li, Yong, Pan, Zizhao, Gan, Weiliang, Lew, Wen Siang, Ma, Fusheng

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Enhanced resistive switching characteristics of conductive bridging memory device by a Co–Cu alloy electrode von Lee, Calvin Xiu Xian, Dananjaya, Putu Andhita, Chee, Mun Yin, Poh, Han Yin, Tan, Funan, Thong, Jia Rui, Liu, Lingli, Lim, Gerard Joseph, Du, Yuanmin, Tan, Juan Boon, Lew, Wen Siang

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Strain-induced degradation and recovery of flexible NbOx-based threshold switching device von Ang, Jia Min, Dananjaya, Putu Andhita, Ang, Calvin Ching Ian, Lim, Gerard Joseph, Lew, Wen Siang

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Reversible strain-induced spin–orbit torque on flexible substrate von Wong, Grayson Dao Hwee, Ang, Calvin Ching Ian, Gan, Weiliang, Law, Wai Cheung, Xu, Zhan, Xu, Feng, Seet, Chim Seng, Lew, Wen Siang

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Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni]n/Co/Ta Multilayer Hall Bars von Li, Sihua, Goolaup, Sarjoosing, Kwon, Jaesuk, Luo, Feilong, Gan, Weiliang, Lew, Wen Siang

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A 126 μW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator von Narasimman, Govind, Basu, Joydeep, Sethi, Pankaj, Krishnia, Sachin, Yi, Chen, Siang, Lew Wen, Basu, Arindam

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Spin orbit torques induced magnetization reversal through asymmetric domain wall propagation in Ta/CoFeB/MgO structures von Cao, Jiangwei, Chen, Yifei, Jin, Tianli, Gan, Weiliang, Wang, Ying, Zheng, Yuqiang, Lv, Hua, Cardoso, Susana, Wei, Dan, Lew, Wen Siang

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Mitigation of Magnus Force in Current-Induced Skyrmion Dynamics von Hiu Tung Fook, Wei Liang Gan, Purnama, Indra, Wen Siang Lew

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Hybridization of Electrodeposited Magnetic Multilayer Micropillars von Palfreyman, J.J., van Belle, F., Wen-Siang Lew, Mitrelias, T., Bland, J.A.C., Lopalco, M., Bradley, M.

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Effect of Geometrical Modulation on pMTJ Magnetization Reversal von Engel, Christian, Goolaup, Sarjoosing, Han Kheng Teoh, Wen Siang Lew

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