Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials von Minghui, Zhang, Wei, Wang, Genqiang, Chen, Rui, Xie, Feng, Wen, Fang, Lin, Yanfeng, Wang, Pengfei, Zhang, Fei, Wang, Shi, He, Yuesong, Liang, Shuwei, Fan, Kaiyue, Wang, Cui, Yu, Tai, Min, Hongxing, Wang

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Hydrogen-terminated diamond field-effect transistor with AlOx dielectric layer formed by autoxidation von Wang, Yan-Feng, Wang, Wei, Chang, Xiaohui, Zhang, Xiaofan, Fu, Jiao, Liu, Zhangcheng, Zhao, Dan, Shao, Guoqing, Fan, Shuwei, Bu, Renan, Zhang, Jingwen, Wang, Hong-Xing

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Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer von Zhang Minghui, Wang Wei, Wen Feng, Lin Fang, Chen Genqiang, Wang Fei, He Shi, Wang Yanfeng, Fan Shuwei, Bu Renan, Min Tai, Yu Cui, Wang Hongxing

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Commentary on “unmasking the morphological alteration of erythrocytes among women suffering from PCOS” von Fan, Shuwei, Shi, Guomei, Li, Kelan

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Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate von Zhang, Minghui, Wang, Wei, Fan, Shuwei, Chen, Genqiang, Abbasi, Haris Naeem, Lin, Fang, Wen, Feng, Zhang, Jingwen, Bu, Renan, Wang, Hong-Xing

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Vertical diamond Schottky barrier diodes with curved field plates von Li, Qi, Liang, Yuesong, Chen, Genqiang, Liu, Zongchen, Zhang, Shumiao, Zeng, Jia, Zhang, Qianwen, Wang, Ruozheng, Zhang, Zhaoyang, Fan, Shuwei, Wang, Hong-Xing

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Multi-dimensional vibration isolating properties of a 3-RPS parallel damping seat von Yan, Bijuan, Dong, Hao, Zhang, Haiqing, Wang, Jun, Fan, Shuwei

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High breakdown electric field diamond Schottky barrier diode with HfO2 field plate von Li, Qi, Zhang, Shumiao, Shao, Guoqing, Wang, Juan, Wang, Ruozheng, Zhang, Qianwen, Chen, Genqiang, He, Shi, Fan, Shuwei, Wang, Hong-Xing

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Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate von Li, Qi, Wang, Juan, Chen, Genqiang, He, Shi, Zhang, Qianwen, Zhang, Shumiao, Wang, Ruozheng, Fan, Shuwei, Wang, Hong-Xing

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Breakdown Voltage Enhancement of Vertical Diamond Schottky Barrier Diode With Annealing Method and AlO Field Plate Structure von Li, Qi, Wang, Juan, Shao, Guoqing, Chen, Genqiang, He, Shi, Zhang, Qianwen, Zhang, Shumiao, Wang, Ruozheng, Fan, Shuwei, Wang, Hong-Xing

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Large VTH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond von Zhang, Minghui, Wang, Wei, Wen, Feng, Lin, Fang, Chen, Genqiang, He, Shi, Wang, Yanfeng, Fan, Shuwei, Bu, Renan, Min, Tai, Wang, Hongxing

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Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al von Wang, Yan-Feng, Chang, Xiaohui, Zhang, Xiaofan, Fu, Jiao, Fan, Shuwei, Bu, Renan, Zhang, Jingwen, Wang, Wei, Wang, Hong-Xing, Wang, Jingjing

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Schottky Barrier Height Modulation of Zr/p-Diamond Schottky Contact by Inserting Ultrathin Atomic Layer-Deposited Al 2 O 3 von Wang, Juan, Shao, Guoqing, Chen, Genqiang, Yan, Xiuliang, Li, Qi, Song, Wangzhen, Wang, Yanfeng, Liu, Zhangcheng, Fan, Shuwei, Zhang, Chaoyang, Wang, Hong-Xing

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HfAlO x /Al 2 O 3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond von Zhang, Minghui, Lin, Fang, Wang, Wei, Wen, Feng, Chen, Genqiang, He, Shi, Wang, Yanfeng, Fan, Shuwei, Bu, Renan, Wang, Hongxing

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Suppressing Nitrogen-Vacancy Centers to Enhance Performance of Diamond Ultraviolet Photodetector via Growing With Tungsten von Chang, Xiaohui, Yan, Xiuliang, Fan, Shuwei, Su, Jianing, Wang, Yan-Feng, Wang, Ruozheng, Chen, Genqiang, Wang, Juan, Wang, Wei, Wang, Hong-Xing

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Hydrogen-terminated diamond field-effect transistor with AlO x dielectric layer formed by autoxidation von Wang, Yan-Feng, Wang, Wei, Chang, Xiaohui, Zhang, Xiaofan, Fu, Jiao, Liu, Zhangcheng, Zhao, Dan, Shao, Guoqing, Fan, Shuwei, Bu, Renan, Zhang, Jingwen, Wang, Hong-Xing

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Enhanced ultraviolet absorption in diamond surface via localized surface plasmon resonance in palladium nanoparticles von Chang, Xiaohui, Wang, Yan-Feng, Zhang, Xiaofan, Liu, Zhangcheng, Fu, Jiao, Zhao, Dan, Fan, Shuwei, Bu, Renan, Zhang, Jingwen, Wang, Wei, Wang, Hong-Xing

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HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond von Zhang, Minghui, Lin, Fang, Wang, Wei, Wen, Feng, Chen, Genqiang, He, Shi, Wang, Yanfeng, Fan, Shuwei, Bu, Renan, Wang, Hongxing

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Enhancing diamond NV center density in HPHT substrate and epitaxy lateral overgrowth layer by tungsten pattern von Liu, Zongchen, Fu, Jiao, Liu, Zhangcheng, Wang, Yanfeng, Fan, Shuwei, Wen, Feng, Wang, Wei, Wang, Kaiyue, Ahmed, Irfan, Wang, Hong-Xing

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Germanium gate hydrogen-terminated diamond field effect transistor with Al 2 O 3 dielectric layer von Minghui, Zhang, Wei, Wang, Feng, Wen, Fang, Lin, Genqiang, Chen, Fei, Wang, Shi, He, Yanfeng, Wang, Shuwei, Fan, Renan, Bu, Tai, Min, Cui, Yu, Hongxing, Wang

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