High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates von Kirilenko, Pavel, Najmi, Mohammed A., Ma, Bei, Shushanian, Artem, Velazquez-Rizo, Martin, Iida, Daisuke, Ohkawa, Kazuhiro

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Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes von Shushanian, Artem, Iida, Daisuke, Han, Yu, Ohkawa, Kazuhiro

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Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid von Shushanian, Artem, Iida, Daisuke, Zhuang, Zhe, Han, Yu, Ohkawa, Kazuhiro

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Chemical and morphological characterization of the anodic oxidation of n -GaN in inorganic electrolytes von Shushanian, Artem, Iida, Daisuke, Han, Yu, Ohkawa, Kazuhiro

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Chemical and morphological characterization of the anodic oxidation of -GaN in inorganic electrolytes von Shushanian, Artem, Iida, Daisuke, Han, Yu, Ohkawa, Kazuhiro

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