Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene von Zhang, Yuhui, Shur, Michael S.

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Far-infrared photodetectors based on graphene/black-AsP heterostructures von Ryzhi, Victor, Ryzhii, Maxim, Mitin, Vladimir, Shur, Michael S., Otsuji, Taiichi

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Compact Terahertz SPICE Model: Effects of Drude Inductance and Leakage von Liu, Xueqing, Dovidenko, Katharine, Park, Junsung, Ytterdal, Trond, Shur, Michael S.

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Coulomb Drag by Injected Ballistic Carriers in Graphene n+−i−n−n+ Structures: Doping and Temperature Effects von Ryzhii, Victor, Otsuji, Taichi, Ryzhii, Maxim, Mitin, Vladimir, Shur, Michael S.

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Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field‐Effect Transistors and Lateral Diodes von Ryzhii, Victor, Ryzhii, Maxim, Satou, Akira, Mitin, Vladimir, Shur, Michael S., Otsuji, Taiichi

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Negative and positive terahertz and infrared photoconductivity in uncooled graphene von Ryzhii, Victor, Ponomarev, Dmitry S., Ryzhii, Maxim, Mitin, Vladimir, Shur, Michael S., Otsuji, Taiichi

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Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS2 heterostructures von Ryzhii, Victor, Ryzhii, Maxim, Maltsev, Petr P., Karasik, Valerij E., Mitin, Vladimir, Shur, Michael S., Otsuji, Taiichi

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Terahertz Plasmonic Technology von Shur, Michael S.

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Graphene-based plasmonic metamaterial for terahertz laser transistors von Otsuji, Taiichi, Boubanga-Tombet, Stephane Albon, Satou, Akira, Yadav, Deepika, Fukidome, Hirokazu, Watanabe, Takayuki, Suemitsu, Tetsuya, Dubinov, Alexander A., Popov, Vyacheslav V., Knap, Wojciech, Kachorovskii, Valentin, Narahara, Koichi, Ryzhii, Maxim, Mitin, Vladimir, Shur, Michael S., Ryzhii, Victor

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Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride von Ryzhii, Victor, Otsuji, Taiichi, Ryzhii, Maxim, Leiman, Vladimir G., Maltsev, Petr P., Karasik, Valeriy E., Mitin, Vladimir, Shur, Michael S.

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p-Diamond, Si, GaN, and InGaAs TeraFETs von Zhang, Yuhui, Shur, Michael S.

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TeraFET terahertz detectors with spatially non-uniform gate capacitances von Zhang, Yuhui, Shur, Michael S.

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Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells von Mickevičius, Jūras, Jurkevičius, Jonas, Tamulaitis, Gintautas, Shur, Michael S, Shatalov, Max, Yang, Jinwei, Gaska, Remis

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Deep-Ultraviolet Light-Emitting Diodes von Shur, M.S., Gaska, R.

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Vertical Hot-electron Terahertz Detectors Based on Black-As1?xPx/graphene/black-As1?yPy Heterostructures von Ryzhii, Maxim, Ryzhii, Victor, Mitin, Vladimir, Shur, Michael S., Otsuji, Taiichi

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Ultrashort Pulse Detection and Response Time Analysis Using Plasma-Wave Terahertz Field-Effect Transistors von Zhang, Yuhui, Shur, Michael S.

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Selective Gas Sensing with a Single Pristine Graphene Transistor von Rumyantsev, Sergey, Liu, Guanxiong, Shur, Michael S, Potyrailo, Radislav A, Balandin, Alexander A

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Contact resistance extraction in pentacene thin film transistors von Necliudov, Peter V, Shur, Michael S, Gundlach, David J, Jackson, Thomas N

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Erratum: “Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene” [J. Appl. Phys. 129, 053102 (2021)] von Zhang, Yuhui, Shur, Michael S.

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Cubic boron nitride as a material for future electron device applications: A comparative analysis von Chilleri, John, Siddiqua, Poppy, Shur, Michael S., O'Leary, Stephen K.

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