On the limit of the injection ability of silicon [p.sup.+]-n junctions as a result of fundamental physical effects von Mnatsakanov, T.T, Levinshtein, M.E, Shuman, V.B, Seredin, B.M

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Magnesium-related shallow donor centers in silicon von Pavlov, S.G., Astrov, Yu.A., Portsel, L.М., Shuman, V.B., Lodygin, А.N., Abrosimov, N.V., Hübers, H.-W.

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Formation of [S.sub.2] "quasi-molecules" in sulfur-doped silicon von Shuman, V.B, Portsel, L.M, Lodygin, A.N, Astrov, Yu.A

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Diffusion of interstitial magnesium in dislocation-free silicon von Shuman, V. B., Lavrent’ev, A. A., Astrov, Yu. A., Lodygin, A. N., Portsel, L. M.

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Doping of silicon with selenium by diffusion from the gas phase von Astrov, Yu. A., Shuman, V. B., Portsel, L. M., Lodygin, A. N.

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Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy von Astrov, Yu. A., Lynch, S. A., Shuman, V. B., Portsel, L. M., Makhova, A. A., Lodygin, A. N.

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Solubility of sulfur in silicon von Shuman, V. B., Makhova, A. A., Astrov, Yu. A., Ivanov, A. M., Lodygin, A. N.

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Planar sulfur-doped silicon detectors for high-speed infrared thermography von Astrov, Yu.A., Portsel, L.M., Lodygin, A.N., Shuman, V.B., Abrosimov, N.V.

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Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization von Shuman, V.B., Savkina, N.S.

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X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates von Shuman, V.B., Ratnikov, V.V., Syväjärvi, Mikael, Yakimova, Rositza, Shulpina, I.L., Savkina, N.S.

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Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers von Shuman, V.B., Ratnikov, V.V., Lebedev, Alexander A., Rogachev, A.Yu, Savkina, N.S.

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Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters von Shuman, V.B., Portsel, L.M., Astrov, Yuri A., Beregulin, E.V., Lodygin, A.N.

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Role of the defects under porous silicon carbide formation von Savkina, N.S., Sorokin, L.M., Hutchison, J.L., Sloan, J., Tregubova, A.S., Mosina, G.N., Shuman, V.B., Ratnikov, V.V.

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X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface von Shuman, V.B., Mosina, G.N., Je, Jung Ho, Sorokin, L.M., Argunova, T.S., Gutkin, Mikhail Yu, Lebedev, Alexander A., Savkina, N.S.

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Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p +–n–n + solar cells von Mnatsakanov, T.T, Shuman, V.B, Pomortseva, L.I, Schröder, D, Schlögl, A

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Investigation into the effect of Auger recombination on charge carrier transport and static characteristics of silicon multilayer structures von Mnatsakanov, T.T., Pomortseva, L.I., Shuman, V.B.

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TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth von Shuman, V.B., Hutchison, John L., Mosina, G.N., Sorokin, L.M., Sloan, Jeremy, Lebedev, Alexander A., Savkina, N.S.

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Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations von Ratnikov, V.V., Shuman, V.B., Lebedev, Alexander A., Savkina, N.S.

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Experimental studies of the initial diffusion stage in semiconductors von Kamanin, A.V., Busygina, L.A., Guk, E.G., Kudryavtsev, Yu.A., Mokina, I.A., Shmidt, N.M., Shuman, V.B., Yurre, T.A.

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Diffraction effects in macroporous silicon with through pores von Remenyuk, A.D., Astrova, E.V., Korovin, L.I., Lang, I.G., Shuman, V.B.

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