Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry von Goto, Daisuke, Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki

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Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells von Yagi, Shuhei, Numata, Shun, Shoji, Yasushi, Okada, Yoshitaka, Yaguchi, Hiroyuki

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Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence von Ferdous, Sanjida, Iwai, Hiroki, Kamata, Norihiko, Yaguchi, Hiroyuki, Yagi, Shuhei

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Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light von Ferdous, Sanjida, Kamata, Norihiko, Yagi, Shuhei, Yaguchi, Hiroyuki

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Growth of InN/GaN dots on 4H-SiC(0001) 4° off vicinal substrates by molecular beam epitaxy von Matsuoka, Keisuke, Yagi, Shuhei, Yaguchi, Hiroyuki

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Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates von Okura, Kazumasa, Takamiya, Kengo, Yagi, Shuhei, Yaguchi, Hiroyuki

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Self‐organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates von Ishii, Kenichi, Yagi, Shuhei, Yaguchi, Hiroyuki

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Photoluminescence intensity change of GaP1−xNx alloys by laser irradiation von Sultan, Md. Zamil, Shiroma, Akinori, Yagi, Shuhei, Takamiya, Kengo, Yaguchi, Hiroyuki

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Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry von Kouda, Keiko, Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki, Yoshida, Sadafumi

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Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells von Takamiya, Kengo, Yagi, Shuhei, Yaguchi, Hiroyuki, Akiyama, Hidefumi, Shojiki, Kanako, Tanikawa, Tomoyuki, Katayama, Ryuji

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Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers von Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki, Miyano, Yutaro

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Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers von Miyano, Yutaro, Asafuji, Ryosuke, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

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Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys von Okubo, Wataru, Yagi, Shuhei, Hijikata, Yasuto, Onabe, Kentaro, Yaguchi, Hiroyuki

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Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry von Yagi, Shuhei, Hijikata, Yasuto, Goto, Daisuke, Yaguchi, Hiroyuki

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Nitrogen Concentration Dependence of Two‐Step Photocurrent Generation by Below‐Gap Excitation in GaPN Alloys von Qayoom, Abdul, Yagi, Shuhei, Yaguchi, Hiroyuki

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RF-MBE growth of cubic InN nano-scale dots on cubic GaN von Suzuki, Junichiro, Orihara, Misao, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

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Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy von Jin, Ri Guo, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

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Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model von Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

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Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N $\delta$-Doped Superlattices von Yagi, Shuhei, Noguchi, Shunsuke, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Yaguchi, Hiroyuki

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Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers von Yamagata, Hikaru, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

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