Extremely high frequency Schottky diodes based on single GaN nanowires von Shugurov, K Yu, Mozharov, A M, Fedorov, V V, Blokhin, S A, Neplokh, V V, Mukhin, I S

Volltext

Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si von Bolshakov, A D, Fedorov, V V, Shugurov, K Yu, Mozharov, A M, Sapunov, G A, Shtrom, I V, Mukhin, M S, Uvarov, A V, Cirlin, G E, Mukhin, I S

Volltext

Numerical study of Schottky diode based on single GaN NW on Si von Shugurov, K Yu, Mozharov, A M, Mukhin, I S

Volltext

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface von Shugurov, K Yu, Mozharov, A M, Bolshakov, A D, Fedorov, V V, Sapunov, G A, Shtrom, I V, Uvarov, A V, Kudryashov, D A, Baranov, A I, Yu Mikhailovskii, V, Neplokh, V V, Tchernycheva, M, Cirlin, G E, Mukhin, I S

Volltext

GaN nanowires/ p-Si interface passivation by hydrogen plasma treatment von Yu Shugurov, K, Mozharov, A M, Bolshakov, A D, Fedorov, V V, Uvarov, A V, Kudryashov, D A, Yu Mikhailovskii, V, Cirlin, G E, Mukhin, I S

Volltext

Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching von Baranov, A I, Kudryashov, D A, Morozov, I A, Uvarov, A V, Shugurov, K Yu, Gudovskikh, A S

Volltext

Microwave Schottky Diodes based on Single GaN Nanowires von Shugurov, K. Yu, Mozharov, A. M., Sapunov, G. A., Fedorov, V. V., Moiseev, E. I., Blokhin, S. A., Kuzmenkov, A. G., Mukhin, I. S.

Volltext

GaN-nanowire/Si solar cell: numerical modeling, fabrication and characterization von Shugurov, K Yu, Mozharov, A M, Sapunov, G A, Fedorov, V V, Bolshakov, A D, Cirlin, G E, Mukhin, I S

Volltext

The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching von Baranov, A I, Kudyashov, D A, Morozov, I A, Shugurov, K Yu, Uvarov, A V, Maximova, A A, Vyacheslavova, E A, Gudovskikh, A S

Volltext

Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires von Sharov, V, Bolshakov, A, Fedorov, V, Shugurov, K Yu, Mozharov, A M, Sapunov, G A, Mukhin, I S

Volltext

Capacitance characterization of silicon nanowires formed by cryogenic dry etching von Baranov, A I, Kudryashov, D A, Dvoretckaia, L N, Morozov, I A, Uvarov, A V, Vyacheslavova, E A, Shugurov, K Yu, Gudovskikh, A S

Volltext

Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching von Baranov, A. I., Kudryashov, D. A., Uvarov, A. V., Morozov, I. A., Shugurov, K. Yu, Maksimova, A. A., Vyacheslavova, E. A., Gudovskikh, A. S.

Volltext

Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells von Shugurov, K U, Mozharov, A M, Sapunov, G A, Fedorov, V V, Bolshakov, A D, Mukhin, I S

Volltext

Influence of hydrogen plasma passivation on electrical and spectral characteristics of GaN nanowires / Si solar cells von Shugurov, K U, Mozharov, A M, Fedorov, V V, Bolshakov, A D, Sapunov, G A, Mukhin, I S

Volltext

GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties von Bolshakov, A.D., Fedorov, V.V., Sapunov, G.A., Mozharov, A.M., Dvoreckaia, L.N., Shugurov, K., Shkoldin, V., Shtrom, I.V., Mukhin, M.S., Cirlin, G.E., Mukhin, I.S.

Volltext

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching von Fedorov, V. V., Bolshakov, A. D., Dvoretckaia, L. N., Sapunov, G. A., Kirilenko, D. A., Mozharov, A. M., Shugurov, K. Yu, Shkoldin, V. A., Cirlin, G. E., Mukhin, I. S.

Volltext

Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires von Bolshakov, A. D., Dvoretckaia, L. N., Fedorov, V. V., Sapunov, G. A., Mozharov, A. M., Shugurov, K. Yu, Shkoldin, V. A., Mukhin, M. S., Cirlin, G. E., Mukhin, I. S.

Volltext

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon von Barykin Dmitrii, Shugurov Konstantin, Mozharov Alexey, Mukhin Ivan

Volltext

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure von Shugurov, K.Yu, Reznik, R.R., Mozharov, A.M., Kotlyar, K.P., Koval, O.Yu, Osipov, A.V., Fedorov, V.V., Shtrom, I.V., Bolshakov, A.D., Kukushkin, S.A., Mukhin, I.S., Cirlin, G.E.

Volltext

Analysis of open waveguides with arbitrary topology of the transverse cross section and piecewise-uniform gyrotropic filling by the method of singular integral equations von Knishevskaya, L. V., Shugurov, V. K.

Volltext