Si:Si LEDs with room-temperature dislocation-related luminescence von Sobolev, N. A., Kalyadin, A. E., Konovalov, M. V., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I., Shtel’makh, K. F., Mikhaylov, A. N., Tetel’baum, D. I.

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Electroluminescence properties of LEDs based on electron-irradiated p-Si von Sobolev, N. A., Shtel’makh, K. F., Kalyadin, A. E., Aruev, P. N., Zabrodskiy, V. V., Shek, E. I., Yang, D.

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Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon von Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Shtel’makh, K. F.

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Effect of the implantation dose and annealing time on the luminescence properties of von Sobolev, N.A, Kalyadin, A.E, Aruev, P.N, Zabrodskii, V.V, Shek, E.I, Shtelmakh, K.F, Karabeshkin, K.V

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Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions von Sobolev, N. A., Shtel’makh, K. F., Kalyadin, A. E., Shek, E. I.

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Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon von Sobolev, N.A., Xiang, Lue Lue, Medvids, Artur, Aruev, P.N., Kalyadin, Anton E., Zabrodski, Vladimir, Loshachenko, A.S., Shek, Elena I., Vdovin, V.I., Yang, De Ren, Shtel'makh, K.F.

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Partly filled impurity band formation in compensated InP : Mn von Mikhrin, S.B., Shtel’makh, K.F.

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Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions von Sobolev, N. A., Kalyadin, A. E., Aruev, P. N., Zabrodskii, V. V., Shek, E. I., Shtel’makh, K. F., Karabeshkin, K. V.

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Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures von Sakharov, V.I., Serenkov, I.T., Emel'yanov, A.M., Kudryavtsev, Yu.A., Parshin, E.O., Makovijchuk, M.I., Nikolaev, Yu.A., Shtel'makh, K.F., Sobolev, N.A.

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Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si : Er : O diodes von Sobolev, N.A., Nikolaev, Yu.A., Emel'yanov, A.M., Shtel'makh, K.F., Khakuashev, P.E., Trishenkov, M.A.

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Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er von Sakharov, V.I., Kyutt, R.N., Serenkov, I.T., Emel'yanov, A.M., Shek, Elena I., Kudryavtsev, Yu.A., Parshin, E.O., Makovijchuk, M.I., Nikolaev, Yu.A., Shtel'makh, K.F., Sobolev, N.A.

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HALOGEN-CONTAINING CHALCOGENIDE GLASS von ANANICHEV V.A, BLINOV L.N, MOKHAMMAD ARIF, SHTEL'MAKH K.F

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Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence von Sobolev, N.A., Kalyadin, A.E., Shek, E.I., Shtel makh, K.F., Gutakovskii, A.K., Vdovin, V.I., Mikhaylov, A.N., Tetel'baum, D.I., Li, D., Yang, D., Fedina, L.I.

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Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation von Nikolskaya, Alena, Korolev, Dmitry, Tereshchenko, Alexey, Pavlenkov, Vladimir, Nagornykh, Sergey, Belov, Alexey, Vasiliev, Valery, Mikhaylov, Alexey, Tetelbaum, David

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Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium von Ergashov, Yokub, Donaev, Burkhon, Khudainazarov, Sherzod, Normuminov, Jakhongir

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Spin-Flip Raman Study of Exchange Interactions in Bulk GaAs:Mn von Sapega, V.F., Ruf, T., Cardona, M.

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Impurity photovoltaic effect in silicon with multicharge Mn clusters von Bakhadyrkhanov, M. K., Iliev, Kh. M., Tachilin, S. A., Nasriddinov, S. S., Abdurakhmanov, B. A.

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Zeeman splitting factor of the Er3+ ion in a crystal field von Ammerlaan, C. A. J., de Maat-Gersdorf, I.

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EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy von Urakawa, C., Nakashima, Y., Ohta, H., Ito, T., Fujiwara, Y., Takeda, Y.

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