Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency von Bochkareva, N. I., Shreter, Y. G.

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Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells von Bochkareva, N. I., Rebane, Y. T., Shreter, Y. G.

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs von Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Kogotkov, V. S., Rebane, Yu. T., Virko, M. V., Shreter, Y. G.

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On the laser lift-off of lightly doped micrometer-Thick w-GaN films from substrates via the absorption of IR radiation in sapphire von Voronenkov, V.V, Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Pinchuk, A.V, Zubrilov, A.S, Gorbunov, R.I, Latishev, F.E, Bochkareva, N.I, Lelikov, Y.S, Tarkhin, D.V, Smirnov, A.N, Davydov, V.Y, Sheremetc, I.A, Shreter, Y.G

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Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals von Shreter, Y.G., Rebane, Y.T., Klyavin, O.V., Aplin, P.S., Axon, C.J., Young, W.T., Steeds, J.W.

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Mechanism of the GaN LED efficiency falloff with increasing current von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

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Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers von Stepanov, S., Wang, W.N., Yavich, B.S., Bougrov, V., Rebane, Y.T., Shreter, Y.G.

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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures von Bochkareva, N. I., Tarkhin, D. V., Rebane, Yu. T., Gorbunov, R. I., Lelikov, Yu. S., Martynov, I. A., Shreter, Yu. G.

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Misfit dislocations and radiative efficiency of In xGa 1− xN/GaN quantum wells von Rebane, Y.T., Shreter, Y.G., Wang, W.N.

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Light Emitting Diode with Charge Asymmetric Resonance Tunneling von Rebane, Y.T., Shreter, Y.G., Yavich, B.S., Bougrov, V.E., Stepanov, S.I., Wang, W.N.

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Influence of cathode material and SiCl{sub 4} gas on inductively coupled plasma etching of AlGaN layers with Cl{sub 2}/Ar plasma von Zhirnov, Evgeny, Stepanov, Sergei, Wang, W.N., Shreter, Y.G., Takhin, D.V., Bochkareva, N.I., A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26, Polytechnicheskaya Str., 194021, St. Petersburg

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Misfit dislocations and radiative efficiency of InxGa1−xN/GaN quantum wells von Rebane, Y.T., Shreter, Y.G., Wang, W.N.

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Strain and microstructure variation in grains of CVD diamond film von Burton, N.C., Steeds, J.W., Meaden, G.M., Shreter, Y.G., Butler, J.E.

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Origin of yellow luminescence from reduced pressure grown bulk GaN crystals von Herrera-Zaldívar, M., Fernández, P., Piqueras, J., Sukhoveyev, V.V., Ivantsov, V.A., Shreter, Y.G.

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Anisotropic polarization of dislocation-related luminescence in thin ZnSe films von Worschech, L., Ossau, W., Waag, A., Landwehr, G., Hilpert, U., Schreiber, J., Rebane, Y.T., Shreter, Y.G.

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g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si von Shreter, Y.G., Rebane, Y.T.

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III-Nitride Unipolar Light Emitting Devices von Shreter, Y.G., Rebane, Y.T., Wang, W.N.

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Scratch-Related Effects on Silicon Surface von Cherns, D., Rebane, Y.T., Shreter, Y.G., Steeds, John W., Tarhin, D.V.

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