Birefringence and refractive indices of wurtzite GaN in the transparency range von Shokhovets, S., Himmerlich, M., Kirste, L., Leach, J. H., Krischok, S.

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Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV von Shokhovets, S., Kirste, L., Leach, J. H., Krischok, S., Himmerlich, M.

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Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy von Himmerlich, M., Eisenhardt, A., Shokhovets, S., Krischok, S., Räthel, J., Speiser, E., Neumann, M. D., Navarro-Quezada, A., Esser, N.

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Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry von Shokhovets, S., Goldhahn, R., Gobsch, G., Piekh, S., Lantier, R., Rizzi, A., Lebedev, V., Richter, W.

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Optical spectroscopy of photovoltaic systems based on low-bandgap polymers von Biank, H.C., Shokhovets, S., Gobsch, G., Runge, E., Sensfuss, S., Klemm, E., Andrae, G.

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Momentum matrix element and conduction band nonparabolicity in wurtzite GaN von Shokhovets, S., Gobsch, G., Ambacher, O.

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Excitons and exciton-phonon coupling in the optical response of GaN von Shokhovets, S., Bärwolf, F., Gobsch, G., Runge, E., Köhler, K., Ambacher, O.

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“Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties von Shokhovets, S., Gobsch, G., Lebedev, V., Ambacher, O.

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Refractive index and gap energy of cubic InxGa1−xN von Goldhahn, R., Scheiner, J., Shokhovets, S., Frey, T., Köhler, U., As, D. J., Lischka, K.

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Optical constants of cubic GaN in the energy range of 1.5–3.7 eV von Köhler, U., As, D. J., Schöttker, B., Frey, T., Lischka, K., Scheiner, J., Shokhovets, S., Goldhahn, R.

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The dielectric function of a GaAs/AlGaAs single quantum well: calculation and comparison with experiment von Herasimovich, A., Shokhovets, S., Goldhahn, R., Gobsch, G.

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Thienopyrazine-based low-bandgap polymers for flexible polymer solar cells von Sensfuss, S., Blankenburg, L., Schache, H., Shokhovets, S., Erb, T., Konkin, A., Herasimovich, A., Scheinert, S., Shahid, M., Sell, S., Klemm, E.

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Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index von Shokhovets, S., Goldhahn, R., Cimalla, V., Cheng, T. S., Foxon, C. T.

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Study of the linear electro-optic effect in α-GaN by electroreflectance von Shokhovets, S, Goldhahn, R, Gobsch, G

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Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity von Shokhovets, S., Fuhrmann, D., Goldhahn, R., Gobsch, G., Ambacher, O., Hermann, M., Karrer, U., Eickhoff, M.

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Spectroscopic ellipsometry of wurtzite ZnO and GaN: Examination of a special case von Shokhovets, S., Spieß, L., Gobsch, G.

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Determination of Group III Nitride Film Properties by Reflectance and Spectroscopic Ellipsometry Studies von Goldhahn, R., Shokhovets, S., Scheiner, J., Gobsch, G., Cheng, T.S., Foxon, C.T., Kaiser, U., Kipshidze, G.D., Richter, W.

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Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance von Shokhovets, S., Fuhrmann, D., Goldhahn, R., Gobsch, G., Ambacher, O., Hermann, M., Eickhoff, M.

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Reflectivity investigations as a method for characterizing group III nitride films von Shokhovets, S., Goldhahn, R., Gobsch, G., Cheng, T. S., Foxon, C. T., Kipshidze, G. D., Richter, Wo

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Multiparametric optimization of polymer solar cells: A route to reproducible high efficiency von Renz, Joachim A., Keller, Thomas, Schneider, Martin, Shokhovets, Sviatoslav, Jandt, Klaus D., Gobsch, Gerhard, Hoppe, Harald

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