Si O 2 ∕ Si 3 N 4 ∕ Al 2 O 3 stacks for scaled-down memory devices:Effects of interfaces and thermal annealing von Lisiansky, M., Heiman, A., Kovler, M., Fenigstein, A., Roizin, Y., Levin, I., Gladkikh, A., Oksman, M., Edrei, R., Hoffman, A., Shnieder, Y., Claasen, T.

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Al 2 O 3 – Si O 2 stack with enhanced reliability von Lisiansky, M., Fenigstein, A., Heiman, A., Raskin, Y., Roizin, Y., Bartholomew, L., Owyang, J., Gladkikh, A., Brener, R., Geppert, I., Lyakin, E., Meyler, B., Shnieder, Y., Yofis, S., Eizenberg, M.

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