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    Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle

    Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle von Shintaku, Teppei, Kareekunnan, Afsal, Akabori, Masashi, Watanabe, Kenji, Taniguchi, Takashi, Mizuta, Hiroshi

    Veröffentlicht in Advanced Physics Research

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    Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle

    Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle von Shintaku, Teppei, Kareekunnan, Afsal, Akabori, Masashi, Watanabe, Kenji, Taniguchi, Takashi, Mizuta, Hiroshi

    Veröffentlicht in arXiv.org

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