Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure von Kan, Shin-ichi, Takemoto, Shu, Kaneko, Kentaro, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi, Fujita, Shizuo

Volltext

Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics von Kaneko, Kentaro, Masuda, Yasuhisa, Kan, Shin-ichi, Takahashi, Isao, Kato, Yuji, Shinohe, Takashi, Fujita, Shizuo

Volltext

Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching von Oshima, Yuichi, Yagyu, Shingo, Shinohe, Takashi

Volltext

Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition von Maeda, Takuya, Okigawa, Mitsuru, Kato, Yuji, Takahashi, Isao, Shinohe, Takashi

Volltext

Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy von Oshima, Yuichi, Ando, Hiroyuki, Shinohe, Takashi

Volltext

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism von Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Shinohe, Takashi

Volltext

Growth of Ga2O3 film on ScAlMgO4 substrate by mist-chemical vapor deposition von Yamashita, Syuhei, Moriya, Ryo, Takane, Hitoshi, Wada, Yuuichi, Yamafuji, Yuto, Kikawa, Junjiroh, Matsukura, Makoto, Kojima, Takahiro, Shinohe, Takashi, Kaneko, Kentaro, Araki, Tsutomu

Volltext

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes von Okada, Aoi, Nishio, Johji, Iijima, Ryosuke, Ota, Chiharu, Goryu, Akihiro, Miyazato, Masaki, Ryo, Mina, Shinohe, Takashi, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Okumura, Hajime

Volltext

Microscopic Examination of SiO2/4H-SiC Interfaces von Hatakeyama, Tetsuo, Suzuki, T., Shinohe, Takashi, Okumura, Hajime, Matsuhata, Hirofumi

Volltext

Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along ⟨1¯21¯0 von Oshima Yuichi, Yagyu Shingo, Shinohe Takashi

Volltext

Epitaxial lateral overgrowth of r -plane α-Ga2O3 with stripe masks along ⟨1¯21 von Oshima, Yuichi, Yagyu, Shingo, Shinohe, Takashi

Volltext

Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along ⟨ 1 ¯ 2 1 ¯ 0 von Oshima, Yuichi, Yagyu, Shingo, Shinohe, Takashi

Volltext

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode von Hatakeyama, Tetsuo, Shinohe, Takashi

Volltext

Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces von Iijima, Ryosuke, Shinohe, Takashi, Senzaki, Junji, Tanaka, Yasunori, Harada, Shinsuke, Ariyoshi, Keiko, Kojima, Takahito, Kobayashi, Yusuke

Volltext

Reduction of dislocation density in α-Ga 2 O 3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy von Oshima, Yuichi, Ando, Hiroyuki, Shinohe, Takashi

Volltext

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers von Matsuura, Hideharu, Komeda, Masahiko, Kagamihara, Sou, Iwata, Hirofumi, Ishihara, Ryohei, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kojima, Kazutoshi, Shinohe, Takashi, Arai, Kazuo

Volltext

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC von Kagamihara, Sou, Matsuura, Hideharu, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kushibe, Mitsuhiro, Shinohe, Takashi, Arai, Kazuo

Volltext

Progress in α-Ga2O3 for practical device applications von Kaneko, Kentaro, Fujita, Shizuo, Shinohe, Takashi, Tanaka, Katsuhisa

Volltext

Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition von Akaiwa, Kazuaki, Ota, Katsuya, Sekiyama, Takahito, Abe, Tomoki, Shinohe, Takashi, Ichino, Kunio

Volltext

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs von Kojima, Kazutoshi, Shinohe, Takashi, Senzaki, Junji, Tanaka, Yasunori, Harada, Shinsuke, Ariyoshi, Keiko, Kojima, Takahito

Volltext