Nanocrystalline Bi2Te3 thin films synthesized by electrodeposition method for photoelectrochemical application von Thorat, J.B., Mohite, S.V., Bagade, A.A., Shinde, T.J., Fulari, V.J., Rajpure, K.Y., Shinde, N.S.

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Evaluation of the holographic parameters by electrosynthesized Cd X Zn 1−X S (X=0.3) thin films using double exposure digital holographic interferometry technique von Dhaygude, H.D., Chikode, P.P., Shinde, S.K., Shinde, N.S., Fulari, V.J.

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Evaluation of the holographic parameters by electrosynthesized CdXZn1−XS (X=0.3) thin films using double exposure digital holographic interferometry technique von Dhaygude, H.D., Chikode, P.P., Shinde, S.K., Shinde, N.S., Fulari, V.J.

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Electrochemical and surface deformation studies on electrodeposited nanostructured Bi2Te3 thin films von Thorat, J.B., Mohite, S.V., Madake, S.B., Suryavanshi, R.D., Rajpure, K.Y., Shinde, T.J., Fulari, V.J., Shinde, N.S.

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Surface profile of minority carrier lifetime in 65 and 100MeV fluorine ion irradiated n-Si (111) von Shinde, N.S., Dahiwale, S.S., Deore, A.V., Bhoraskar, V.N., Dhole, S.D.

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Nanocrystalline Bi 2 Te 3 thin films synthesized by electrodeposition method for photoelectrochemical application von Thorat, J.B., Mohite, S.V., Bagade, A.A., Shinde, T.J., Fulari, V.J., Rajpure, K.Y., Shinde, N.S.

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Studies on electrodeposited silver sulphide thin films by double exposure holographic interferometry von Prabhune, V.B., Shinde, N.S., Fulari, V.J.

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Structural and Optical Properties of Spray-deposited Cu2ZnSnS4 thin Films von Deokate, R.J., Adsool, A.D., Shinde, N.S., Pawar, S.M., Lokhande, C.D.

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Surface profile of minority carrier lifetime in 65 and 100 MeV fluorine ion irradiated n-Si (111) von Shinde, N.S., Dahiwale, S.S., Deore, A.V., Bhoraskar, V.N., Dhole, S.D.

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Studies on electrodeposited As 2S 3 thin films by double exposure holographic interferometry technique von Shinde, N.S., Prabhune, V.B., Dhaigude, H.D., Lokhande, C.D., Fulari, V.J.

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Studies on electrodeposited AS2S3 thin films by double exposure holographic interferometry technique von SHINDE, N. S, PRABHUNE, V. B, DHAIGUDE, H. D, LOKHANDE, C. D, FULARI, V. J

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Characterization of electrodeposited Bi 2S 3 thin films by holographic interferometry von Shinde, N.S., Rath, M.C., Dhaigude, H.D., Lokhande, C.D., Fulari, V.J.

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Characterization of electrodeposited Bi2S3 thin films by holographic interferometry von SHINDE, N. S, RATH, M. C, DHAIGUDE, H. D, LOKHANDE, C. D, FULARI, V. J

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Bias dependent charge trapping in MOSFETs during 1 and 6MeV electron irradiation von Shinde, N.S., Kulkarni, V.R., Mathakari, N.L., Bhoraskar, V.N., Dhole, S.D.

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The SOURCE project: Quantifying and reducing the uncertainties associated with in situ stiffness measurements von Shinde, N.S., Buckley, R.M., Rieman, L.P.

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Swift heavy ion induced single event upsets in high density UV-EPROM’s von Dahiwale, S.S., Shinde, N.S., Kanjilal, D., Bhoraskar, V.N., Dhole, S.D.

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Depth distribution of carrier lifetime in 65MeV oxygen ion irradiated silicon wafers von Shinde, N.S., Dahiwale, S.S., Kanjilal, D., Bhoraskar, V.N., Dhole, S.D.

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Alignment of grain orientation in polycrystalline-SiO2 films induced by high-energy heavy ions von Shinde, N.S., Matsunami, N., Shimura, T., Sataka, M., Okayasu, S., Kato, T., Tazawa, M.

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Damage induced by high energy multiply charged oxygen ions in oxide coated silicon von Dhole, S.D., Dahiwale, S.S., Kulkarni, V.R., Bogle, K.A., Shinde, N.S., Bhoraskar, V.N.

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Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs von Shinde, N.S, Dhole, S.D, Kanjilal, D, Bhoraskar, V.N

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