RF HBT oscillators with low-phase noise and high-power performance utilizing a (/spl lambda//4/spl plusmn//spl delta/) open-stubs resonator von Hosoya, K., Tanaka, S., Amamiya, Y., Niwa, T., Shimawaki, H., Honjo, K.

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Highly efficient operation of space harmonic peniotron at cyclotron high harmonics von Ishihara, T., Sagae, K., Sato, N., Shimawaki, H., Yokoo, K.

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Laser-assisted electron emission from gated field-emitters von Ishizuka, H., Kawamura, Y., Yokoo, K., Mimura, H., Shimawaki, H., Hosono, A.

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Smith–Purcell experiment utilizing a field-emitter array cathode: measurements of radiation von Ishizuka, H, Kawamura, Y, Yokoo, K, Shimawaki, H, Hosono, A

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(Invited) Silicon Field Emitter Array Photocathode von Shimawaki, Hidetaka, Nagao, Masayoshi, Neo, Yoichiro, Mimura, Hidenori, Wakaya, Fujio, Takai, Mikio

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50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs von Suzuki, Y., Shimawaki, H., Amamiya, Y., Nagano, N., Niwa, T., Yano, H., Honjo, K.

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Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP von Tanaka, S., Shimawaki, H., Kasahara, K., Honjo, K.

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Experiments with field-emitter arrays for free electron micro-laser applications von Ishizuka, H, Kawasaki, S, Arai, M, Shimawaki, H, Yokoo, K, Kubo, H, Watanabe, A, Shiho, M, Itoh, J

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A Ka-band HBT MMIC power amplifier von Tanaka, S., Yamanouchi, S., Amamiya, Y., Niwa, T., Hosoya, K., Shimawaki, H., Honjo, K.

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A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsets von Nishimura, T.B., Tanomura, M., Azuma, K., Nakai, K., Hasegawa, Y., Shimawaki, H.

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Energy distributions of field emission electrons from silicon emitters von Shimawaki, Hidetaka, Suzuki, Yousuke, Sagae, Katsumi, Neo, Yoichiro, Mimura, Hidenori

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Beam extraction experiment with field-emission arrays von Ishizuka, H., Watanabe, A., Shiho, M., Kawasaki, S., Itoh, J., Arai, M., Shimawaki, H., Yokoo, K.

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Stress current behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with polyimide passivation von Tanaka, S.-I., Kashahara, K., Shimawaki, H., Honjo, K.

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Selective growth of p +-GaAs by metalorganic molecular beam epitaxy von Furuhata, N., Shimawaki, H., Okamoto, A.

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High-f(max) AlGaAs/InGaAs and AlGaAs/GaAs HBT''s with p/+//p regrown base contacts von Shimawaki, H, Amamiya, Y, Furuhata, N, Honjo, K

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Analogue Dynamic Supply Voltage L-band GaN High Power Amplifier with Improvement of Efficiency and Linearity von Matsunaga, K., Tanomura, M., Nakayama, T., Ando, Y., Miyamoto, H., Shimawaki, H.

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Photo-response of a p-type Si field emitter von Mimura, H., Ukeba, T., Shimawaki, H., Yokoo, K.

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Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode von Mimura, H., Yilmazoglu, O., Shimawaki, H., Yokoo, K., Mutamba, K., Hartnagel, H.

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A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique von Ota, K., Endo, K., Okamoto, Y., Ando, Y., Miyamoto, H., Shimawaki, H.

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Millimeter-wave ad-hoc wireless access system. (1) System overview von Shoji, Y., Hamaguchi, K., Ogawa, H., Akeyama, A., Shiraki, Y., Yoshida, K., Hirose, T., Shimawaki, H., Sakamoto, K.

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