Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates von Moon, Sung-Woon, Twynam, John, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Roh, Sungwon D.

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Heteroepitaxial silicon film growth at 600 °C from an Al–Si eutectic melt von Chaudhari, P., Shim, Heejae, Wacaser, Brent A., Reuter, Mark C., Murray, Conal, Reuter, Kathleen B., Jordan-Sweet, Jean, Ross, Frances M., Guha, Supratik

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Electron-phonon interactions in superconducting La1.84Sr0.16CuO4 films von Shim, Heejae, Chaudhari, P, Logvenov, Gennady, Bozovic, Ivan

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High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNx surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.

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Grain boundaries in the cuprate superconductors: tapes and tunneling spectroscopy von Chaudhari, P, Shim, Heejae

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Electron-Phonon Interactions in Superconducting La 1.84 Sr 0.16 CuO 4 Films von Shim, Heejae, Chaudhari, P., Logvenov, Gennady, Bozovic, Ivan

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All MgB2 tunnel junctions with Al2O3 or MgO tunnel barriers von Shim, Heejae, Yoon, K. S., Moodera, J. S., Hong, J. P.

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High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D.

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High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN sub(x) surface passivation layer deposited by low pressure CVD von Moon, Sung-Woon, Lee, Jongsub, Seo, Deokwon, Jung, Sungdal, Choi, Hong Goo, Shim, Heejae, Yim, Jeong Soon, Twynam, John, Roh, Sungwon D

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Heteroepitaxial silicon film growth at 600A degree C from an Al-Si eutectic melt von Chaudhari, P, Shim, Heejae, Wacaser, Brent A, Reuter, Mark C, Murray, Conal, Reuter, Kathleen B, Jordan-Sweet, Jean, Ross, Frances M, Guha, Supratik

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VERTICAL POWER SEMICONDUCTOR DEVICE von SIEMIENIEC, Ralf, SHIM, Heejae, BHANDARI, Jyotshna

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All Mg B 2 tunnel junctions with Al 2 O 3 or MgO tunnel barriers von Shim, Heejae, Yoon, K. S., Moodera, J. S., Hong, J. P.

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Light emitting device von SHIM HEEJAE

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Direct Evidence for Ferromagnetism of Nanometer-Scale Palladium by Contact with Perovskite Manganite von Kim, Young Nam, Lee, Eun Kwang, Lee, Yong Bok, Shim, Heejae, Hur, Nam Hwi, Kim, Wan Seop

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LIGHT EMITTING DEVICE von SHIM HEEJAE

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Distribution of nitrogen in a magnetic tunnel junction with nitrogen-treated interface von Shim, Heejae, Cho, B.K., Kim, Jin-Tae, Choi, J.W., Park, Y.

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Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation von Nam, C. H., Shim, Heejae, Kim, K. S., Cho, B. K.

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Magnetic tunnel junctions with a tunnel barrier formed by N2O plasma von Shim, Heejae, Park, J. M., Kim, K. P., Cho, B. K., Kim, Jin-Tae, Park, Y.

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Effect of nitrogen plasma treatment at the Al2O3/Fe interface in magnetic tunnel junction von Shim, Heejae, Cho, B. K., Kim, Jin-Tae, Kim, T. W., Park, W. J.

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Anomalous tunneling magnetoresistance in junctions with an Au dusting layer at the Co/Al2O3 interface von Shim, Heejae, Cho, B. K., Kim, Jin-Tae

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