Development of Molecular Beam Epitaxially Grown Hg1−x Cd x Te for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays von Aqariden, F, Dreiske, P D, Kinch, M A, Liao, P K, Murphy, T, Schaake, H F, Shafer, T A, Shih, H D, Teherani, T H

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High-Operating-Temperature MWIR Detector Diodes von Schaake, H.F., Kinch, M.A., Chandra, D., Aqariden, F., Liao, P.K., Weirauch, D.F., Wan, C.-F., Scritchfield, R.E., Sullivan, W.W., Teherani, J.T., Shih, H.D.

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Noise Attributes of LWIR HDVIP HgCdTe Detectors von D’Souza, A.I., Stapelbroek, M.G., Robinson, E.W., Yoneyama, C., Mills, H.A., Kinch, M.A., Skokan, M.R., Shih, H.D.

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Growth of high quality ZnSe on closely lattice-matched InGaAs substrates by metal organic chemical vapor deposition von Bevan, M.J., Shih, H.D., Liu, H.Y., Syllaios, A.J., Duncan, W.M.

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Electrical and structural properties of Insb (111) epitaxially grown on Al 2O 3 (0001) von Jamison, K.D., Bensaoula, A., Shih, H.D., Ignatiev, A.

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A RHEED and XPS study of In xGa 1− xAs on GaAs grown by chemical beam epitaxy von Bensaoula, A., Hansen, H., Chen, H.C., Zborowski, J.T., Jamison, K.D., Ignatiev, A., Shih, H.D., Tao, Y.K.

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Low temperature alloying in the [formula omitted] system von Shih, H.D., Bauer, E., Poppa, H.

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Electrical and structural properties of Insb (111) epitaxially grown on Al2O3 (0001) von Jamison, K.D., Bensaoula, A., Shih, H.D., Ignatiev, A.

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Millimeter-wave GaAs distributed IMPATT diodes von Bayraktaroglu, B., Shih, H.D.

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High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxy von Saunier, P., Shih, H. D.

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MBE growth and characterization of In xGa 1−xSb/InAs strained layer superlattices von Fashe, R., Zborowski, J.T., Golding, T.D., Shih, H.D., Chow, P.C., Matsuichi, K., Covington, B.C., Chi, A., Zheng, J., Schaake, H.F.

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GaAs power MESFET with 41-percent power-added efficiency at 35 GHz von Kim, B., Wurtele, M., Shih, H.D., Tserng, H.Q.

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MBE growth and characterization of InxGa1-xSb/InAs strained layer superlattices von FASHE, R, ZBOROWSKI, J. T, GOLDING, T. D, SHIH, H. D, CHOW, P. C, MATSUICHI, K, COVINGTON, B. C, CHI, A, ZHENG, J, SCHAAKE, H. F

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Microwave power GaAs MISFET's with undoped AlGaAs as an insulator von Kim, B., Tserng, H.Q., Shih, H.D.

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Millimeter-wave GaAs FET's prepared by MBE von Kim, B., Tserng, H.Q., Shih, H.D.

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A rheed and XPS study of InxGa1-xAs on GaAs grown by chemical beam epitaxy von BENSAOULA, A, HANSEN, H, CHEN, H. C, ZBOROWSKI, J. T, JAMISON, K. D, IGNATIEV, A, SHIH, H. D, TAO, Y. K

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44-GHz monolithic GaAs FET amplifier von Kim, B., Tserng, H.Q., Shih, H.D.

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VA-3 state-of-the-art K-band GaAs power field-effect transistors prepared by molecular beam expitaxy von Saunier, P., Shih, H.D.

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Atomic structure of Fe {111} von Shih, H.D., Jona, F., Jepsen, D.W., Marcus, P.M.

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New relaxation phenomena in the outer atomic layers of Fe{211} von Sokolov, J., Shih, H.D., Bardi, U., Jona, F., Marcus, P.M.

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