Optical and electrical characteristics of p -GaSe doped with Te von Shigetomi, S., Ikari, T.

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Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction von Shigetomi, S., Ikari, T.

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Optical properties of GaSe grown with an excess and a lack of Ga atoms von Shigetomi, S., Ikari, T.

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Electrical and optical properties of n - and p -InSe doped with Sn and As von Shigetomi, S., Ikari, T.

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Radiative transitions of layered semiconductor GaS doped with P von Shigetomi, S., Ikari, T.

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Radiative centers in layered semiconductor GaS doped with Zn von Shigetomi, S., Ikari, T.

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Impurity levels in the layered semiconductor p-GaSe doped with group V elements As, Bi and Sb von Shigetomi, S., Ikari, T.

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Radiative centers in GaS doped with Zn and Cd von Shigetomi, S., Ikari, T.

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Photoluminescence of layered semiconductor GaS doped with Mn von Shigetomi, S., Sakai, K., Ikari, T.

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Impurity levels in layered semiconductor n-InSe doped with Ge von Shigetomi, S., Ikari, T.

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Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopies von Sakai, K., Fukuyama, A., Shigetomi, S., Ikari, T.

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Temperature dependence of photoluminescence of layer semiconductor p-GaTe von Shigetomi, S, Ikari, T, Nishimura, H

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Annealing Behavior of Layered Semiconductor p-GaSe Single Crystal von Shigetomi, S., Ikari, T., Nishimura, N.

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Characterization of phosphorus in layer semiconductor GaSe von Shigetomi, S, Ikari, T, Nakashima, H

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Defective dopamine generation from dihydroxyphenylalanine in stable essential hypertensive patients von Kuchel, O, Shigetomi, S

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Optical and electrical properties of layer semiconductor p-GaSe doped with Zn von SHIGETOMI, S, IKARI, T, NAKASHIMA, H

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Electrical properties of layer semiconductor p -GaSe doped with Cu von Shigetomi, S., Ikari, T., Nakashima, H.

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Transport and optical properties of the layer semiconductor p-type GaSe doped with Li von Shigetomi, S., Ikari, T.

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Impurity Levels in p-Type Layered Semiconductor InSe Doped with Hg von Shigetomi, S., Ikari, T., Nakashima, H.

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Optical properties of layered semiconductor GaS doped with As von Shigetomi, S., Ikari, T.

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