Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs von Paz de Araujo, C. A., Celinska, Jolanta, McWilliams, Chris R., Shifren, Lucian, Yeric, Greg, Huang, X. M. Henry, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanas’ev, Valeri, Marino, Eduardo C., Narayan, Dushyant Madhav, Dessau, Daniel S.

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Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS von Adamu-Lema, Fikru, Xingsheng Wang, Amoroso, Salvatore Maria, Riddet, Craig, Binjie Cheng, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg, Asenov, Asen

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A 90-nm logic technology featuring strained-silicon von Thompson, S.E., Armstrong, M., Auth, C., Alavi, M., Buehler, M., Chau, R., Cea, S., Ghani, T., Glass, G., Hoffman, T., Jan, C.-H., Kenyon, C., Klaus, J., Kuhn, K., Zhiyong Ma, Mcintyre, B., Mistry, K., Murthy, A., Obradovic, B., Nagisetty, R., Phi Nguyen, Sivakumar, S., Shaheed, R., Shifren, L., Tufts, B., Tyagi, S., Bohr, M., El-Mansy, Y.

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ASAP7: A 7-nm finFET predictive process design kit von Clark, Lawrence T., Vashishtha, Vinay, Shifren, Lucian, Gujja, Aditya, Sinha, Saurabh, Cline, Brian, Ramamurthy, Chandarasekaran, Yeric, Greg

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A logic nanotechnology featuring strained-silicon von Thompson, S.E., Armstrong, M., Auth, C., Cea, S., Chau, R., Glass, G., Hoffman, T., Klaus, J., Zhiyong Ma, Mcintyre, B., Murthy, A., Obradovic, B., Shifren, L., Sivakumar, S., Tyagi, S., Ghani, T., Mistry, K., Bohr, M., El-Mansy, Y.

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Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers von Wang, E.X., Matagne, P., Shifren, L., Obradovic, B., Kotlyar, R., Cea, S., Stettler, M., Giles, M.D.

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Physical Modeling of Layout-Dependent Transistor Performance von Knutson, Karson L., Cea, Stephan, Giles, Martin, Keys, Patrick, Davids, Paul, Weber, Cory, Shifren, Lucian, Kotlyar, Roza, Hwang, Jack, Talukdar, Suddha, Stettler, Mark

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UNIVERSAL NON-POLAR SWITCHING IN CARBON-DOPED TRANSITION METAL OXIDES (TMO) AND POST TMO von Paz de Araujo, Carlos A, Celinska, Jolanta, McWilliams, Chris R, Shifren, Lucian, Yeric, Greg, Henry Huang, X.M, Suryavanshi, Saurabh Vinayak, Rosendale, Glen, Afanasiev, Valeri, Marino, Eduardo C, Narayan, Dushyant Madhav, Dessau, Daniel S

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Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors von Yijiao Wang, Al-Ameri, Talib, Xingsheng Wang, Georgiev, Vihar P., Towie, Ewan, Amoroso, Salvatore Maria, Brown, Andrew R., Cheng, Binjie, Reid, David, Riddet, Craig, Shifren, Lucian, Sinha, Saurabh, Yeric, Greg, Aitken, Robert, Xiaoyan Liu, Jinfeng Kang, Asenov, Asen

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Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology von Shifren, Lucian, Aitken, Robert, Brown, Andrew R., Chandra, Vikas, Binjie Cheng, Riddet, Craig, Alexander, Craig L., Cline, Brian, Millar, Campbell, Sinha, Saurabh, Yeric, Greg, Asenov, Asen

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Predicting future complementary metal–oxide–semiconductor technology – challenges and approaches von Aitken, Robert, Chandra, Vikas, Cline, Brian, Das, Shidhartha, Pietromonaco, David, Shifren, Lucian, Sinha, Saurabh, Yeric, Greg

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Correlated electron switch von Shifren, Lucian

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CORRELATED ELECTRON SWITCH von SHIFREN, Lucian

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Multiple impedance correlated electron switch fabric von Shifren, Lucian

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CORRELATED ELECTRON SWITCH von SHIFREN, Lucian

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CORRELATED ELECTRON SWITCH von Shifren Lucian

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Correlated electron switch von Shifren Lucian

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Asymmetric correlated electron switch operation von Yeric, Greg, Shifren, Lucian

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MULTIPLE IMPEDANCE CORRELATED ELECTRON SWITCH STRUCTURE von SHIFREN, Lucian

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MULTIPLE IMPEDANCE CORRELATED ELECTRON SWITCH FABRIC von Shifren Lucian

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