Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics von Chen, H.-Y., Huang, Y.-R., Shih, H.-Y., Chen, M.-J., Sheu, J.-K., Sun, C.-K.

Volltext

High-Speed GaN-Based Green Light-Emitting Diodes With Partially n-Doped Active Layers and Current-Confined Apertures von Shi, J.-W., Sheu, J.-K., Chen, C.-H., Lin, G.-R., Lai, W.-C.

Volltext

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors von Sheu, J.K., Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Lin, Y.C., Lai, W.C., Tsai, J.M., Chi, G.C., Wu, R.K.

Volltext

The doping process and dopant characteristics of GaN von Sheu, J K, Chi, G C

Volltext

GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication von Wun, Jhih-Min, Lin, Che-Wei, Chen, Wei, Sheu, J.-K., Lin, Ching-Liang, Li, Yun-Li, Bowers, John E., Shi, Jin-Wei, Vinogradov, Juri, Kruglov, Roman, Ziemann, Olaf

Volltext

High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer von Lee, Ming-Lun, Mue, T S, Huang, F W, Yang, J H, Sheu, J K

Volltext

Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire von Jang, C. H., Sheu, J. K., Chang, S. J., Lee, M. L., Yang, C. C., Tu, S. J., Huang, F. W., Hsu, C. K.

Volltext

Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique von Shi, J.-W, Kuo, F.-M, Che-Wei Lin, Wei Chen, Yan, L.-J, Sheu, J.-K

Volltext

Very-High Temperature (200 ^C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer von Jin-Wei Shi, Huang, H.-W, Kuo, F.-M, Sheu, J.-K, Lai, W.-C, Lee, M L

Volltext

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs von Chung-Hsun Jang, Sheu, J.K., Tsai, C.M., Shei, S.C., Lai, W.C., Chang, S.J.

Volltext

The improvement in modulation speed of GaN-based Green light-emitting diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication von Shi, J.-W., Huang, H.-Y., Sheu, J.-K., Chen, C.-H., Wu, Y.-S., Lai, W.-C.

Volltext

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD von Tsai, C.M., Sheu, J.K., Lai, W.C., Hsu, Y.P., Wang, P.T., Kuo, C.T., Kuo, C.W., Chang, S.J., Su, Y.K.

Volltext

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes von Wu, L.W., Chang, S.J., Wen, T.C., Su, Y.K., Chen, J.F., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K.

Volltext

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts von Chen, C.H., Chang, S.J., Su, Y.K., Chi, G.C., Chi, J.Y., Chang, C.A., Sheu, J.K., Chen, J.F.

Volltext

Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance von Shi, J.-W., Sheu, J.-K., Wang, C.-K., Chen, C.-C., Hsieh, C.-H., Chyi, J.-I., Lai, W.-C.

Volltext

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs von Hsu, Y.P, Chang, S.J, Su, Y.K, Sheu, J.K, Lee, C.T, Wen, T.C, Wu, L.W, Kuo, C.H, Chang, C.S, Shei, S.C

Volltext

Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers von Sheu, J. K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W. C., Chen, C. W., Chi, G. C.

Volltext

Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light von Shi, J.-W., Huang, H.-Y., Wang, C.-K., Sheu, J.-K., Lai, W.-C., Wu, Y.-S., Chen, C.-H., Chu, J.-T., Kuo, H.-C., Wei-Ping Lin, Tsung-Hsun Yang, Chyi, J.-I.

Volltext

High-transparency Ni/Au ohmic contact to p -type GaN von Sheu, J. K., Su, Y. K., Chi, G. C., Koh, P. L., Jou, M. J., Chang, C. M., Liu, C. C., Hung, W. C.

Volltext

Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions von Shi, J.-W., Chen, C.-C., Wang, C.-K., Lin, C.-S., Sheu, J.-K., Lai, W.-C., Kuo, C.-H., Tun, C.-J., Yang, T.-H., Tsao, F.-C., Chyi, J.-I.

Volltext