Powerful interface light emitting diodes for methane gas detection von Krier, A, Sherstnev, V V

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Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm von Gao, H. H., Krier, A., Sherstnev, V. V.

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The influence of melt purification and structure defects on mid-infrared light emitting diodes von Krier, A, Sherstnev, V V

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Mid-infrared ring laser von Krier, A., Sherstnev, V.V., Wright, D., Monakhov, A.M., Hill, G.

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The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes von Monakhov, A, Krier, A, Sherstnev, V V

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Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering von Krier, A., Gao, H. H., Sherstnev, V. V.

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Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection von Sherstnev, V. V., Monahov, A. M., Krier, A., Hill, G.

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A novel LED module for the detection of H2S at 3.8 μm von KRIER, A, SHERSTNEV, V. V, GAO, H. H

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LEDs for formaldehyde detection at 3.6 μm von KRIER, A, SHERSTNEV, V. V

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High tunability and superluminescence in InAs mid-infrared light emitting diodes von Sherstnev, V V, Krier, A, Hill, G

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High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm von Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A., Sherstnev, V. V.

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Semiconductor WGM Lasers for the Mid-IR Spectral Range von Sherstnev, V. V.

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High quality InAs grown by liquid phase epitaxy using gadolinium gettering von Gao, H H, Krier, A, Sherstnev, V V

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General theory of multi-phase melt crystallization von Charykov, N.A., Sherstnev, V.V., Krier, A.

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Optical switching in midinfrared light-emitting diodes von Krier, A., Sherstnev, V. V., Gao, H. H., Monahov, A. M., Hill, G.

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The effect of pressure on the radiative efficiency of InAs based light emitting diodes von Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A., Sherstnev, V. V.

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2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers von Baranov, A. N., Imenkov, A. N., Sherstnev, V. V., Yakovlev, Yu. P.

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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy von Krier, A, Sherstnev, V V, Labadi, Z, Krier, S E, Gao, H H

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Specificity of postsynaptic excitations of different sensory modality in neurons of edible snail during learning von Nikitin, V P, Sudakov, K V, Sherstnev, V V

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Tunable 3.3 μm InAsSb/InAsSbP diode lasers: a new concept of fast lasing due to nonlinear optical effects von Yakovlev, Yu. P., Danilova, A. P., Imenkov, A. N., Kolchanova, N. M., Sherstnev, V. V.

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