50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics von Hergenrother, J.M., Wilk, G.D., Nigam, T., Klemens, F.P., Monroe, D., Silverman, P.J., Sorsch, T.W., Busch, B., Green, M.L., Baker, M.R., Boone, T., Bude, M.K., Ciampa, N.A., Ferry, E.J., Fiory, A.T., Hillenius, S.J., Jacobson, D.C., Johnson, R.W., Kalavade, P., Keller, R.C., King, C.A., Kornblit, A., Krautter, H.W., Lee, J.T.-C., Mansfield, W.M., Miner, J.F., Morris, M.D., Oh, S.-H., Rosamilia, J.M., Sapjeta, B.J., Short, K., Steiner, K., Muller, D.A., Voyles, P.M., Grazul, J.L., Shero, E.J., Givens, M.E., Pomarede, C., Mazanec, M., Werkhoven, C.

Volltext bestellen