Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra von Payusov, A. S., Beckman, A. A., Kornyshov, G. O., Shernyakov, Yu. M., Maximov, M. V., Gordeev, N. Yu

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Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots von Kornyshov, G. O., Gordeev, N. Yu, Shernyakov, Yu. M., Beckman, A. A., Payusov, A. S., Mintairov, S. A., Kalyuzhnyy, N. A., Maximov, M. V.

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Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers von Maximov, M. V., Shernyakov, Yu. M., Kornyshov, G. O., Simchuk, O. I., Gordeev, N. Yu, Beckman, A. A., Payusov, A. S., Mintairov, S. A., Kalyuzhnyy, N. A., Kulagina, M. M., Zhukov, A. E.

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Information Encoding Using Two-Level Generation in a Quantum Dot Laser von Maximov, M. V., Shernyakov, Yu. M., Gordeev, N. Yu, Nadtochiy, A. M., Zhukov, A. E.

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The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures von Novikov, I. I., Nyapshaev, I. A., Gladyshev, A. G., Andryushkin, V. V., Babichev, A. V., Karachinsky, L. Yu, Shernyakov, Yu. M., Denisov, D. V., Kryzhanovskaya, N. V., Zhukov, A. E., Egorov, A. Yu

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Internal Loss in Diode Lasers with Quantum Well-Dots von Zhukov, A. E., Nadtochiy, A. M., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Gordeev, N. Yu, Serin, A. A., Mintairov, S. A., Kalyuzhnyy, N. A., Payusov, A. S., Kornyshov, G. O., Maximov, M. V., Wang, Y.

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Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide von Muretova, M. E., Zubov, F. I., Asryan, L. V., Shernyakov, Yu. M., Maximov, M. V., Zhukov, A. E.

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Virtual cavity in distributed Bragg reflectors von Shchukin, V A, Ledentsov, N N, Kalosha, V P, Ledentsov, N, Agustin, M, Kropp, J-R, Maximov, M V, Zubov, F I, Shernyakov, Yu M, Payusov, A S, Gordeev, N Yu, Kulagina, M M, Zhukov, A E, Egorov, A Yu

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Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers von Gordeev, N. Yu, Moiseev, E. I., Fominykh, N. A., Kryzhanovskaya, N. V., Beckman, A. A., Kornyshov, G. O., Zubov, F. I., Shernyakov, Yu. M., Zhukov, A. E., Maximov, M. V.

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Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots von Shernyakov, Yu. M., Gordeev, N. Yu, Payusov, A. S., Serin, A. A., Kornyshov, G. O., Nadtochiy, A. M., Kulagina, M. M., Mintairov, S. A., Kalyuzhnyy, N. A., Maximov, M. V., Zhukov, A. E.

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Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance von Gordeev, N. Yu, Payusov, A. S., Mukhin, I. S., Serin, A. A., Kulagina, M. M., Guseva, Yu. A., Shernyakov, Yu. M., Zadiranov, Yu. M., Maximov, M. V.

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Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides von Zhukov, A. E., Gordeev, N. Yu, Shernyakov, Yu. M., Payusov, A. S., Serin, A. A., Kulagina, M. M., Mintairov, S. A., Kalyuzhnyy, N. A., Maximov, M. V.

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Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces von Ledentsov, N. N., Shchukin, V. A., Lyytikäinen, J., Okhotnikov, O., Shernyakov, Yu. M., Payusov, A. S., Gordeev, N. Yu, Maximov, M. V., Schlichting, S., Nippert, F., Hoffmann, A.

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InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) von Nadtochiy, A. M., Shernyakov, Yu. M., Kulagina, M. M., Payusov, A. S., Gordeev, N. Yu, Maximov, M. V., Zhukov, A. E., Denneulin, T., Cherkashin, N., Shchukin, V. A., Ledentsov, N. N.

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Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots von Zubov, F. I., Moiseev, E. I., Kornyshov, G. O., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Payusov, A. S., Kulagina, M. M., Kalyuzhnyi, N. A., Mintairov, S. A., Maximov, M. V., Zhukov, A. E.

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Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates von Maximov, M. V., Nadtochiy, A. M., Shernyakov, Yu. M., Payusov, A. S., Vasil’ev, A. P., Ustinov, V. M., Serin, A. A., Gordeev, N. Yu, Zhukov, A. E.

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Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region von Zhukov, A. E., Gordeev, N. Yu, Shernyakov, Yu. M., Payusov, A. S., Serin, A. A., Kulagina, M. M., Mintairov, S. A., Kalyuzhnyi, N. A., Maksimov, M. V.

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Investigation of the Modified Structure of a Quantum Cascade Laser von Mamutin, V. V., Maleev, N. A., Vasilyev, A. P., Ilyinskaya, N. D., Zadiranov, Yu. M., Usikova, A. A., Yagovkina, M. A., Shernyakov, Yu. M., Ustinov, V. M.

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Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures von Maksimov, M. V., Shernyakov, Yu. M., Zubov, F. I., Novikov, I. I., Gladyshev, A. G., Karachinsky, L. Ya, Denisov, D. V., Rochas, S. S., Kolodeznyi, E. S., Egorov, A. Yu, Zhukov, A. E.

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Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges von Nadtochiy, A. M., Mintairov, S. A., Kalyuzhnyy, N. A., Shernyakov, Yu. M., Kornyshov, G. O., Serin, A. A., Payusov, A. S., Nevedomsky, V. N., Gordeev, N. Yu, Maximov, M. V., Zhukov, A. E.

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