A silicon sublimation source for molecular-beam epitaxy von Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Shengurov, D. V.

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals von Shmagin, V B, Yablonskiy, A N, Stepikhova, M V, Yurasov, D V, Mikhaylov, A N, Tetelbaum, D I, Rodyakina, E E, Morozova, E E, Shengurov, D V, Kraev, S A, Yunin, P A, Belov, A I, Novikov, A V

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Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs von Sushkov, A. A., Pavlov, D. A., Andrianov, A. I., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kriukov, R. N., Baidus, N. V., Yurasov, D. V., Rykov, A. V.

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Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al{sub 2}O{sub 3} Substrate von Sushkov, A. A., Pavlov, D. A., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Baidus, N. V., Rykov, A. V., Kryukov, R. N.

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Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots von Smagina, Zh. V., Stepikhova, M. V., Zinovyev, V. A., Dyakov, S. A., Rodyakina, E. E., Shengurov, D. V., Kacyuba, A. V., Novikov, A. V.

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Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source von Titova, A. M., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Zaitsev, A. V., Alyabina, N. A., Kudrin, A. V., Zdoroveishev, A. V.

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Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers von Filatov, D. O., Shenina, M. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Kruglov, A. V., Vorontsov, V. A., Pavlov, D. A., Gorshkov, O. N.

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Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation von Peretokin, Artem V, Yurasov, Dmitry V, Stepikhova, Margarita V, Shaleev, Mikhail V, Yablonskiy, Artem N, Shengurov, Dmitry V, Dyakov, Sergey A, Rodyakina, Ekaterina E, Smagina, Zhanna V, Novikov, Alexey V

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Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities von Yurasov, D. V., Baídakova, N. A., Verbus, V. A., Gusev, N. S., Morozova, E. E., Shengurov, D. V., Yablonskiy, A. N., Novikov, A. V.

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Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate von Tikhov, S. V., Shengurov, V. G., Denisov, S. A., Antonov, I. N., Kruglov, A. V., Belov, A. I., Filatov, D. O., Gorshkov, O. N., Mikhailov, A. N.

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Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel von Alyabina, N. A., Arkhipova, E. A., Buzynin, Yu. N., Denisov, S. A., Zdoroveishchev, A. V., Titova, A. M., Chalkov, V. Yu, Shengurov, V. G.

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Investigation of resistive switching in Ag/Ge/Si(001) stack by conductive atomic force microscopy von Vorontsov, V A, Antonov, D A, Kruglov, A V, Antonov, I N, Shenina, M E, Kotomina, V E, Shengurov, V G, Denisov, S A, Chalkov, V Yu, Pavlov, D A, Filatov, D O, Gorshkov, O N

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GaAs diode structures with n+-p junction on Ge/Si templates von Rykov, A V, Denisov, S A, Shengurov, V G, Baidus, N V, Buzynin, Yu N

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Bipolar resistive switching in memristors based on Ge/Si(001) epitaxial layers von Gorshkov, O, Filatov, D, Koveshnikov, S, Shenina, M, Soltanovich, O, Shengurov, V, Denisov, S, Chalkov, V, Antonov, I, Pavlov, D, Vorontsov, V, Kruglov, A, Yakimov, E

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Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn von Shengurov, V.G., Chalkov, V.Yu, Denisov, S.A., Trushin, V.N., Zaitsev, A.V., Nezhdanov, A.V., Pavlov, D.A., Filatov, D.O.

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A device for heating a substrate during molecular beam epitaxy von Shengurov, V. G., Denisov, S. A., Svetlov, S. P., Chalkov, V. Yu, Shengurov, D. V.

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Structure and surface morphology of GeSn/Si(001) layers grown by HW CVD with co-evaporation of Sn von Zaitsev, A V, Kuz'min, M Yu, Denisov, S A, Shengurov, V G, Chalkov, V Yu, Kudrin, A V, Ved', M V, Filatov, D O

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Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy von Vorontsov, V. A., Antonov, D. A., Kruglov, A. V., Antonov, I. N., Kotomina, V. E., Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu, Filatov, D. O., Gorshkov, O. N.

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A device for growing silicon films on standard wafers using a sublimation source von Denisov, S. A., Svetlov, S. P., Chalkov, V. Yu, Shengurov, D. V., Shengurov, V. G.

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Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition von Shengurov, V. G., Filatov, D. O., Denisov, S. A., Chalkov, V. Yu, Alyabina, N. A., Zaitsev, A. V.

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