Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation von Peretokin, Artem V, Yurasov, Dmitry V, Stepikhova, Margarita V, Shaleev, Mikhail V, Yablonskiy, Artem N, Shengurov, Dmitry V, Dyakov, Sergey A, Rodyakina, Ekaterina E, Smagina, Zhanna V, Novikov, Alexey V

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals von Shmagin, V B, Yablonskiy, A N, Stepikhova, M V, Yurasov, D V, Mikhaylov, A N, Tetelbaum, D I, Rodyakina, E E, Morozova, E E, Shengurov, D V, Kraev, S A, Yunin, P A, Belov, A I, Novikov, A V

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Mid-IR lasing in HgCdTe multiple quantum well edge-emitting ridges von Utochkin, Vladimir, Kudryavtsev, Konstantin, Rumyantsev, Vladimir, Fadeev, Mikhail, Razova, Anna, Mikhailov, Nikolai, Shengurov, Dmitry, Gusev, Sergey, Gusev, Nikita, Morozov, Sergey

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Supplement von Yablonskiy, Artem, Shmagin, Vyacheslav, Zakharov, Vsevolod, Yurasov, Dmitry, Shaleev, Mikhail Vladimirovich, Demidov, Evgeniy, Mikhaylov, Alexey, Tetelbaum, David, Rodyakina, Ekaterina, Morozova, Elena, Shengurov, Dmitry, Kraev, Stanislav, Novikov, Alexey

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GaAs/Ge/Si epitaxial substrates: Development and characteristics von Buzynin, Yury, Shengurov, Vladimir, Zvonkov, Boris, Buzynin, Alexander, Denisov, Sergey, Baidus, Nikolay, Drozdov, Michail, Pavlov, Dmitry, Yunin, Pavel

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Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates von Shengurov, Vladimir, Denisov, Sergei, Chalkov, Vadim, Trushin, Vladimir, Zaitsev, Andrei, Prokhorov, Dmitry, Filatov, Dmitry, Zdoroveishchev, Anton, Ved, Mikhail, Kudrin, Alexey, Dorokhin, Mikhail, Buzynin, Yuri

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Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization von Kumar, Mahesh

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