A cold-electrode metal–oxide resistive random access memory von Cao, Jifang, Chen, Bing, Wang, Zhijiang, Qu, Junru, Zhao, Jiayi, Shen, Rongzong, Yu, Xiao, Yu, Zhiping, Liu, Fei

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Solution-based synthesis of PEDOT:PSS films with electrical conductivity over 6300 S/cm von Shi, Yanbin, Zhou, Yuqin, Shen, Rongzong, Liu, Fengzhen, Zhou, Yurong

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Solution Processed Organic/Silicon Nanowires Hybrid Heterojunction Solar Cells Using Organosilane Incorporated Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Hole Trans... von Shen, Rongzong, Sun, Zongheng, Shi, Yanbin, Zhou, Yurong, Guo, Wanwu, Zhou, Yuqin, Yan, Hui, Liu, Fengzhen

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Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature von Xu, Jiacheng, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Rong, Jian, Liu, Huan, Ding, Yian, Zhang, Miaomiao, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan

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Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2 von Qian, Haoji, Shen, Rongzong, Zhang, Hongrui, Xu, Jiacheng, Lin, Gaobo, Ding, Yian, Gu, Jiani, Yu, Xiao, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan

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Organic/silicon nanowires hybrid solar cells using isobutyltriethoxysilane incorporated poly(3,4‐ethylenedioxythiophene):poly (styrenesulfonate) as hole transport layer von Shen, Rongzong, Sun, Zongheng, Zhou, Yurong, Shi, Yanbin, Shang, Jiacheng, Chen, Hu, Zhou, Yuqin, Liu, Fengzhen

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Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications von Zhang, Miaomiao, Qian, Haoji, Xu, Jiacheng, Ma, Minglei, Shen, Rongzong, Lin, Gaobo, Gu, Jiani, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan

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Boost Antiferroelectricity in ZrO } -Based Capacitors by Ozone Treatment on Bottom Electrode von Qian, Haoji, Shen, Rongzong, Wang, Jiameng, Xu, Jiacheng, Lin, Gaobo, Gu, Jiani, Zhang, Miaomiao, Ma, Minglei, Liu, Huan, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan

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Anti-Ferroelectric ZrO 2 Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM von Xu, Jiacheng, Ma, Minglei, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Song, Xinda, Liu, Huan, Liu, Yan, Chen, Jiajia, Jin, Chengji, Han, Genquan

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Anti-Ferroelectric ZrO2 Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM von Xu, Jiacheng, Ma, Minglei, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Song, Xinda, Liu, Huan, Liu, Yan, Chen, Jiajia, Jin, Chengji, Han, Genquan

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Resistance Switching and Carrier Transport Mechanisms of HfO2-Based Ferroelectric Diode von Ma, Minglei, Lin, Gaobo, Shen, Rongzong, Xu, Jiacheng, Qian, Haoji, Gu, Jiani, Liu, Huan, Zhang, Hongrui, Yu, Xiao, Liu, Yan, Chen, Jiajia, Jin, Chengji, Han, Genquan

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Resistance Switching and Carrier Transport Mechanisms of HfO 2 -Based Ferroelectric Diode von Ma, Minglei, Lin, Gaobo, Shen, Rongzong, Xu, Jiacheng, Qian, Haoji, Gu, Jiani, Liu, Huan, Zhang, Hongrui, Yu, Xiao, Liu, Yan, Chen, Jiajia, Jin, Chengji, Han, Genquan

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Anti-Ferroelectric ZrO2 Capacitors With Ultralow Operating Voltage von Xu, Jiacheng, Ma, Minglei, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Song, Xinda, Liu, Huan, Liu, Yan, Chen, Jiajia, Jin, Chengji, Han, Genquan

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PEDOT:PSS/SiNWs Hybrid Solar Cells With an Effective Nanocrystalline Silicon Back Surface Field Layer by Low Temperature Catalytic Diffusion von Shen, Rongzong, Liu, Ming, Zhou, Yurong, Li, Fengchao, Wang, Huamei, Yang, Yufei, Liu, Fengzhen

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Supplemental material von Cao, Jifang, Chen, Bing, Wang, Zhijiang, Qu, Junru, Zhao, Jiayi, Shen, Rongzong, Yu, Xiao, Yu, Zhiping, liu, Fei

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Supplemental Materials: Dynamic Evolution of Oxygen Vacancies During Cycling in Antiferroelectric HfxZr1-xO2 von Qian, Haoji, Shen, Rongzong, Zhang, Hongrui, Xu, Jiacheng, Lin, Gaobo, Ding, Yian, Gu, Jiani, Yu, Xiao, Liu, Yan, Jin, Chengji, Chen, jiajia, Han, Genquan

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Ferroelectric field effect transistor with double-gate structure and preparation method thereof von KIM SUNG-GIL, SHEN RONGZONG, YU XIAO, LIN GAOBO

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Method and device for preventing current interruption and conversation interruption for telephone et of extrapolation current or extra cell type von RONGZONG SHEN

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Oxide-metal composite electron transport layer manufactured based on solution method and crystalline silicon solar cell including oxide-metal composite electron transport layer von ZHOU YURONG, SHEN RONGZONG, LIU FENGZHEN, LIU MING, LI FENGCHAO

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Molybdenum oxide thin film preparation method, and silicon heterojunction solar cell using molybdenum oxide thin film as hole transport layer von ZHOU YURONG, SHEN RONGZONG, LIU FENGZHEN, LIU MING, LI FENGCHAO

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