Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer von Nanhui, Niu, Huaibing, Wang, Jianping, Liu, Naixin, Liu, Yanhui, Xing, Jun, Han, Jun, Deng, Guangdi, Shen

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Enhanced performance of p-GaN by Mg δ doping von Wang, Huaibing, Liu, Jianping, Niu, Nanhui, Shen, Guangdi, Zhang, Shuming

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Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction von Nanhui, Niu, Huaibing, Wang, Jianping, Liu, Naixin, Liu, Yanhui, Xing, Jun, Han, Jun, Deng, Guangdi, Shen

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Analysis for load limitation of square-shaped silicon diaphragms von Linlin, Zhao, Chen, Xu, Guangdi, Shen

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Experimental and numerical investigation on GaN/Al2O3 laser lift-off technique von Wang, Ting, Fang, Yuan, Guo, Xia, Shen, Guangdi, Cui, Zhanzhong

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Investigation of GaN layer grown on different low misoriented sapphire by MOCVD von Xing, Yanhui, Han, Jun, Deng, Jun, Li, Jianjun, Xu, Chen, Shen, Guangdi

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Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes von Shen, Guangdi, Da, Xiaoli, Guo, Xia, Zhu, Yanxu, Niu, Nanhui

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Thin film AlGaInP light emitting diodes with different reflectors von Gao, Wei (伟高), Guo, Weiling (伟玲 郭), Zou, Deshu (德恕 邹), Qin, Yuan (圆秦), Jiang, Wenjing (文静 蒋), Shen, Guangdi (光地 沈)

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The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes von Da, Xiaoli, Guo, Xia, Dong, Limin, Song, Yingping, Ai, Weiwei, Shen, Guangdi

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ICP dry etching ITO to improve the performance of GaN-based LEDs von 孟丽丽 陈依新 马莉 刘自可 沈光地

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Enhanced output of flip-chip light-emitting diodes with a sidewall reflector von Zhu, Yanxu, Xu, Chen, Da, Xiaoli, Liang, Ting, Zhang, Jianming, Shen, Guangdi

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Reliability of AlGaInP light emitting diodes with an ITO current spreading layer von Wei, Gao, Weiling, Guo, Yanxu, Zhu, Wenjing, Jiang, Guangdi, Shen

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Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening von Liu, Zike, Gao, Wei, Xu, Chen, Zou, Deshu, Qin, Yuan, Guo, Jing, Shen, Guangdi

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Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes von Da, XiaoLi, Shen, GuangDi, Xu, Chen, Zou, DeShu, Zhu, YanXu, Zhang, Jia

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GaN-based light-emitting diodes with SiONx on sidewalls von Zhu, Yanxu, Xu, Chen, Da, Xiaoli, Niu, Nanhui, Han, Jun, Shen, Guangdi

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Absorption of photons in the thin film AlGaInP light emitting diode von Gao, Wei (伟高), Guo, Weiling (伟玲 郭), Zou, Deshu (德恕 邹), Jiang, Wenjing (文静 蒋), Liu, Zike (自可 刘), Shen, Guangdi (光地 沈)

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Interrupted Mg doping of GaN with MOCVD for improved p-type layers von Yanhui, Xing, Jun, Han, Jianping, Liu, Nanhui, Niu, Jun, Deng, Litong, Guangdi, Shen

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AlGaInP LEDs with surface anti-reflecting structure von Yixin, Chen, Guangdi, Shen, Jianjun, Li, Jinru, Han, Chen, Xu

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Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask von 蒋文静 徐晨 沈光地 方瑢 高伟

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ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes von Shu, Xiongwen, Xu, Chen, Tian, Zengxia, Shen, Guangdi

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