Differential characteristics of the particles sputtered by gas cluster ions at elevated temperatures. Molecular dynamics simulation von Ieshkin, A.E., Nazarov, A.V., Bessmertniy, D.R., Kutlusurin, I.N., Shemukhin, A.A.

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Energy distributions of the particles sputtered by gas cluster ions. Experiment and computer simulation von Ieshkin, A.E., Nazarov, A.V., Tatarintsev, A.A., Kireev, D.S., Zavilgelsky, A.D., Shemukhin, A.A., Chernysh, V.S.

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Surface antibacterial activity of multi-walled carbon nanotubes with an intrinsic and radiation-induced disorder von Elsehly, E.M., Evseev, A.P., Vorobyeva, E.A., Balakshin, Yu.V., Nazarov, A.V., Stepanov, A.V., Dimitrieva, A.I., Popov, A.P., Kovalenko, A.V., Yumanov, D.S., Abo-Neima, S., Chechenin, N.G., Shemukhin, A.A.

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Simulation of defects formation in nanotubes under ion irradiation von Shemukhin, A.A., Stepanov, A.V., Nazarov, A.V., Balakshin, Yu.V.

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Nanoscale matrices to transport high-energy beams von Muratova, E N, Shemukhin, A A

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Enhancement of CNT-based filters efficiency by ion beam irradiation von Elsehly, Emad M., Chechenin, N.G., Makunin, A.V., Shemukhin, A.A., Motaweh, H.A.

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The parameter influence of ion irradiation on the distribution profile of the defect in silicon films von Shemukhin, A.A., Balaskshin, Yu.V., Evseev, A.P., Chernysh, V.S.

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Evolution of the multi-walled carbon nanotubes structure with increasing fluence of He ion irradiation von Kushkina, K.D., Shemukhin, A.A., Vorobyeva, E.A., Bukunov, K.A., Evseev, A.P., Tatarintsev, A.A., Maslakov, K.I., Chechenin, N.G., Chernysh, V.S.

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Radiation-induced paramagnetic defects in porous silicon under He and Ar ion irradiation von Evseev, A.P., Kozhemiako, A.V., Kargina, Yu.V., Balakshin, Yu.V., Zvereva, E.A., Сhernysh, V.S., Gongalsky, M.B., Shemukhin, A.A.

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Defect formation and recrystallization in the silicon on sapphire films under Si+ irradiation von Shemukhin, A.A., Nazarov, A.V., Balakshin, Yu. V., Chernysh, V.S.

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Irradiation-induced defects in graphene on copper von Minnebaev, D.K., Balakshin, Yu.V., Nazarov, A.V., Kharitonov, I.D., Zaitsev, E.V., Zabolotskiy, A.D., Chernysh, V.S., Shemukhin, A.A.

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The conductivity of high-fluence noble gas ion irradiated CVD polycrystalline diamond von Borisov, A.M., Kazakov, V.A., Mashkova, E.S., Ovchinnikov, M.A., Shemukhin, A.A., Sigalaev, S.K.

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Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111) von Tarasov, A.S., Lukyanenko, A.V., Tarasov, I.A., Bondarev, I.A., Smolyarova, T.E., Kosyrev, N.N., Komarov, V.A., Yakovlev, I.A., Volochaev, M.N., Solovyov, L.A., Shemukhin, A.A., Varnakov, S.N., Ovchinnikov, S.G., Patrin, G.S., Volkov, N.V.

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MWCNT-based surfaces with tunable wettability obtained by He+ ion irradiation von Evseev, A.P., Vorobyeva, E.A., Balakshin, Yu.V., Kushkina, K.D., Stepanov, A.V., Сhernysh, V.S., Chechenin, N.G., Shemukhin, A.A.

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Study of the distribution profile of iron ions implanted into silicon von Kozhemyako, A. V., Balakshin, Yu. V., Shemukhin, A. A., Chernysh, V. S.

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Relief evolution of HOPG under high-fluence 30keV argon ion irradiation von Andrianova, N.N., Borisov, A.M., Mashkova, E.S., Shemukhin, A.A., Shulga, V.I., Virgiliev, Yu.S.

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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride von Korolev, D. S., Mikhaylov, A. N., Belov, A. I., Vasiliev, V. K., Guseinov, D. V., Okulich, E. V., Shemukhin, A. A., Surodin, S. I., Nikolitchev, D. E., Nezhdanov, A. V., Pirogov, A. V., Pavlov, D. A., Tetelbaum, D. I.

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Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation von Shemukhin, A. A., Balakshin, Y. V., Chernysh, V. S., Golubkov, S. A., Egorov, N. N., Sidorov, A. I.

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