Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition von Lee, In-Hwan, Polyakov, Alexander Y., Smirnov, Nikolai B., Yakimov, Eugene B., Tarelkin, Sergey A., Turutin, Andery V., Shemerov, Ivan V., Pearton, Stephen J.

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Current relaxation analysis in AlGaN/GaN high electron mobility transistors von Polyakov, Alexander Y., Smirnov, N. B., Shchemerov, Ivan V., Lee, In-Hwan, Jang, Taehoon, Dorofeev, Alexey A., Gladysheva, Nadezhda B., Kondratyev, Eugene S., Turusova, Yulia A., Zinovyev, Roman A., Turutin, A. V., Ren, Fan, Pearton, S. J.

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