Universality of mode-locked jitter performance von Braun, A.M., Khalfin, V.B., Kwakernaak, M.H., Reichert, W.F., DiMarco, L.A., Shellenbarger, Z.A., DePriest, C.M., Yilmaz, T., Delfyett, P.J., Abeles, J.H.

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Reduction of AlGaAs Heterostructure High-Index-Contrast Ridge Waveguide Scattering Loss by Sidewall Smoothing Through Oxygen-Enhanced Wet Thermal Oxidation von Seibert, C.S., Hall, D.C., Di Liang, Shellenbarger, Z.A.

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Epitaxial InGaAsP/InP photodiode for registration of InP scintillation von Luryi, S., Kastalsky, A., Gouzman, M., Lifshitz, N., Semyonov, O., Stanacevic, M., Subashiev, A., Kuzminsky, V., Cheng, W., Smagin, V., Chen, Z., Abeles, J.H., Chan, W.K., Shellenbarger, Z.A.

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Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (100) InP substrates von DASHIELL, M. W, EHSANI, H, SANDER, P. C, NEWMAN, F. D, WANG, C. A, SHELLENBARGER, Z. A, DONETSKI, D, GU, N, ANIKEEV, S

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Triple-axis X-ray reciprocal space mapping of In y Ga 1− y As thermophotovoltaic diodes grown on (1 0 0) InP substrates von Dashiell, M.W., Ehsani, H., Sander, P.C., Newman, F.D., Wang, C.A., Shellenbarger, Z.A., Donetski, D., Gu, N., Anikeev, S.

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Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers von Ehsani, H., Lewis, N., Nichols, G.J., Danielson, L., Dashiell, M.W., Shellenbarger, Z.A., Wang, C.A.

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Liquid-phase epitaxy of low-bandgap III–V antimonides for thermophotovoltaic devices von Mauk, M.G, Shellenbarger, Z.A, Cox, J.A, Sulima, O.V, Bett, A.W, Mueller, R.L, Sims, P.E, McNeely, J.B, DiNetta, L.C

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Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system von Mauk, M.G, Shellenbarger, Z.A, Sims, P.E, Bloothoofd, W, McNeely, J.B, Collins, S.R, Rabinowitz, P.I, Hall, R.B, DiNetta, L.C, Barnett, A.M

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Infrared free carrier response of In 0.15Ga 0.85As 0.17Sb 0.83 epilayers on GaSb von Snyder, P.G., Tiwald, T.E., Thompson, D.W., Ianno, N.J., Woollam, J.A., Mauk, M.G., Shellenbarger, Z.A.

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Development of 1550 nm bipolar cascade lasers von Shellenbarger, Z.A., Khalfin, V.B., An, H., Abeles, J.H.

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Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb von Snyder, P.G., Tiwald, T.E., Thompson, D.W., Ianno, N.J., Woollam, J.A., Mauk, M.G., Shellenbarger, Z.A.

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Indium-phosphide-based microresonator modulators and wavelength multiplexers von Abeles, J.H., Kwakernaak, M.H., Mohseni, H., Lepore, A.N., Pajer, G.A., Griffel, G., Lee, T.P., Braun, A.M., Bechtle, D.R., Shellenbarger, Z.A., Adesida, I., Rommel, S., Bae, J.W., Jang, J.H.

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Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics von Mauk, M.G., Shellenbarger, Z.A., Cox, J.A., Tata, A.N., Warden, T.G., Dinetta, L.C., Mueller, R.L.

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Vertically integrated InGaAsP/InP microstack lasers von An, H., Chan, K., Shellenbarger, Z.A., Willner, B.I.

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Recent progress in InGaAsSb/GaSb TPV devices von Shellenbarger, Z.A., Mauk, M.G., DiNetta, L.C., Charache, G.W.

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Highly linear and efficient GaInAsP-InP phase modulators von Mohseni, H., An, H., Shellenbarger, Z.A., Kwakernaak, M.H., Lepore, A.N., Abeles, J.H., Delfyett, P.J.

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Electro-refractive low loss MMI-coupled ring resonators von Kwakernaak, M.H., Lepore, A.N., Mohseni, H., An, H., Shellenbarger, Z.A., Abeles, J.H., Bac, J.-O., Rommel, S.L., Adesida, I.

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Wavelength selective WDM modulator with high-Q ring resonators in deeply etched InP/InGaAsP waveguides von Kwakernaak, M.H., Lepore, A.N., Mohseni, H., Maley, N., An, H., Shellenbarger, Z.A., Braun, A.M., Chan, W.K., Abeles, J.H., Bae, J.W., Jang, J.H., Adesida, L.

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