The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs von Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F.

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Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT von Brannick, A., Zakhleniuk, N.A., Ridley, B.K., Shealy, J.R., Schaff, W.J., Eastman, L.F.

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Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation von Hyungtak Kim, Thompson, R.M., Tilak, V., Prunty, T.R., Shealy, J.R., Eastman, L.F.

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Undoped AlGaN/GaN HEMTs for microwave power amplification von Eastman, L.F., Tilak, V., Smart, J., Green, B.M., Chumbes, E.M., Dimitrov, R., Hyungtak Kim, Ambacher, O.S., Weimann, N., Prunty, T., Murphy, M., Schaff, W.J., Shealy, J.R.

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Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates von Chumbes, E.M., Smart, J.A., Prunty, T., Shealy, J.R.

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AlGaN/GaN high electron mobility transistors on Si(111) substrates von Chumbes, E.M., Shealy, J.R., Schremer, A.T., Smart, J.A., Wang, Y., MacDonald, N.C., Hogue, D., Komiak, J.J., Lichwalla, S.J., Leoni, R.E.

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Methodology for Small-Signal Model Extraction of AlGaN HEMTs von Shealy, J.R., Jiali Wang, Brown, R.

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Performance of the AlGaN HEMT structure with a gate extension von Thompson, R., Prunty, T., Kaper, V., Shealy, J.R.

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Growth and passivation of AlGaN/GaN heterostructures von Shealy, J.R., Prunty, T.R., Chumbes, E.M., Ridley, B.K.

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Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs von Kaper, V.S., Thompson, R.M., Prunty, T.R., Shealy, J.R.

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High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates von Green, B.M., Tilak, V., Lee, S., Kim, H., Smart, J.A., Webb, K.J., Shealy, J.R., Eastman, L.F.

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Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions von Green, B.M., Tilak, V., Kaper, V.S., Smart, J.A., Shealy, J.R., Eastman, L.F.

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Low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs) von Shealy, J.B., Smart, J.A., Shealy, J.R.

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High-power monolithic AlGaN/GaN HEMT oscillator von Kaper, V.S., Tilak, V., Hyungtak Kim, Vertiatchikh, A.V., Thompson, R.M., Prunty, T.R., Eastman, L.F., Shealy, J.R.

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Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices von Ambacher, O., Dimitrov, R., Stutzmann, M., Foutz, B.E., Murphy, M.J., Smart, J.A., Shealy, J.R., Weimann, N.G., Chu, K., Chumbes, M., Green, B., Sierakowski, A.J., Schaff, W.J., Eastman, L.F.

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Progress in High-Power, High Frequency AlGaN/GaN HEMTs von Eastman, L.F., Tilak, V., Kaper, V., Smart, J., Thompson, R., Green, B., Shealy, J.R., Prunty, T.

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Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors von Dimitrov, R, Tilak, V, Yeo, W, Green, B, Kim, H, Smart, J, Chumbes, E, Shealy, J.R, Schaff, W, Eastman, L.F, Miskys, C, Ambacher, O, Stutzmann, M

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Cascode connected AlGaN/GaN HEMTs on SiC substrates von Green, B.M., Chu, K.K., Smart, J.A., Tilak, V., Hyungtak Kim, Shealy, J.R., Eastman, L.F.

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AlxSiyNz passivated AlGaN/GaN high electron mobility transistors von Brown, R.J., Harvard, E., Shealy, J.R.

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Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension von Matragrano, M. J., Ast, D. G., Shealy, J. R., Krishnamoorthy, V.

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