The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon von Bulakh, B. M., Korsunska, N. E., Khomenkova, L. Yu, Staraya, T. R., Sheĭnkman, M. K.

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Centers of photosensitivity in ZnO von Markevich, I.V., Kushnirenko, V.I., Borkovska, L.V., Bulakh, B.M., Sheinkman, M.K., Prokopenko, I.V.

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Redistribution of mobile point defects in CdS crystals under ultrasound treatment von Borkovska, L.V., Baran, M.P., Korsunska, N.O., Markevich, I.V., Singaevsky, O.F., Sheinkman, M.K., Torchynska, T.V.

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Some Peculiarities of Impurity Diffusion in CdS Crystals von Borkovska, L.V., Khomenkova, L.Yu, Korsunska, N.E., Markevich, I.V., Sheinkman, M.K.

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Two ways of porous Si photoluminescence excitation von Torchinskaya, T.V, Korsunskaya, N.E, Khomenkova, L.Yu, Sheinkman, M.K, Baran, N.P, Misiuk, A, Surma, B, Dzhumaev, B

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Ultrasound regeneration of EL2 centres in GaAs von Buyanova, I A, Ostapenko, S S, Sheinkman, M K, Murrikov, M

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Excitation mechanism of porous silicon luminescence: the role of sensitizers von Buyanova, I.A., Korsunskaya, N.E., Savchuk, A.U., Sheinkman, M.K., von Bardeleben, H.J.

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OH-related emitting centers in interface layer of porous silicon von Torchynska, T.V, Sheinkman, M.K, Korsunskaya, N.E, Khomenkovan, L.Yu, Bulakh, B.M, Dzhumaev, B.R, Many, A, Goldstein, Y, Savir, E

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Generation of metastable shallow donors induced by cooling in hexagonal II-VI semiconductors von Korsunskaya, N E, Markevich, I V, Shulga, E P, Sheinkman, M K

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Manifestation of effective-mass states of secondary minima in the persistent photoconductivity related to the DX centre in AlxGa1-xAs von BELYAEV, A. E, RYABCHENKO, YU. S, SHEINKMAN, M. K, VON BARDELEBEN, H. J

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Transformation of excitonic and DA luminescence spectra of GaP:N light-emitting structures on the introduction of dislocations von Torchinskaya, T V, Korsunskaya, N E, Sheinkman, M K

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Influence of subthreshold ultrasound treatment on the recombination properties of dislocations in GexSi1-x-Si heterostructures von Buyanova, I A, Savchuk, A U, Sheinkman, M K, Kittler, M

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Investigation of lattice defects by means of their drift under electric field von Korsunska, N.E., Markevich, I.V., Borkovska, L.V., Khomenkova, L.Yu, Sheinkman, M.K., Yastrubchak, O.

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Point defect formation in II–VI semiconductors at pulsed laser irradiation von Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.

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Properties of shallow-level D −-centers in polar semiconductors von Kashirina, N. I., Lakhno, V. D., Sychev, V. V., Sheinkman, M. K.

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Determination of the Np and pP heterojunction quality in AlxGa1-xAs LPE-grown double heterostructures from the capacitance measurements von Puzin, I B, Phyliptchenko, V Ya, Sheinkman, M K, Shervarly, G K

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Defect formation in solids by decay of electronic excitations von Klinger, M I, Lushchik, Ch B, Mashovets, T V, Kholodar', G A, Sheĭnkman, M K, Élango, M A

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Photoluminescence and EPR studies of porous silicon von Torchinskaya, T.V., Baran, N.P., Korsunskaya, N.E., Dzhumaev, B.R., Khomenkova, L.Yu, Sheinkman, M.K.

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The Auger Processes with Energy Transfer to the Bound Charge Carriers in Multi-Valley Semiconductors von Vorobev, Yu. V., Tolpygo, E. I., Sheinkman, M. K.

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Diffusion of one- and two-electron vacancy centers in polar crystals von Kashirina, N. I., Lakhno, V. D., Sychyov, V. V., Sheinkman, M. K.

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