Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments von Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Lagov, P. B., Zinov'ev, R. A., Yakimov, E. B., Shcherbachev, K. D., Pearton, S. J.

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Freestanding single crystal AlN layers grown using the SiC substrate evaporation method von Mokhov, E. N, Argunova, T. S, Je, J. H, Kazarova, O. P, Shcherbachev, K. D

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Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays von Argunova, T. S., Gutkin, M. Yu, Shcherbachev, K. D., Je, J. H., Lim, J. -H., Kazarova, O. P., Mokhov, E. N.

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Strengthening of mechanically alloyed Al-based alloy with high Zr contents von Prosviryakov, A.S., Shcherbachev, K.D.

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Microstructural characterization of mechanically alloyed Al–Cu–Mn alloy with zirconium von Prosviryakov, A.S., Shcherbachev, K.D., Tabachkova, N.Yu

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XAFS and TEM Investigation of Nanocluster Formation in 64Zn+ Ion-Implanted and Thermo-Oxidized SiO2 Film von Khramov, E. V., Privezentsev, V. V., Palagushkin, A. N., Shcherbachev, K. D., Tabachkova, N. Yu

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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Nikolaev, V. I., Stepanov, S. I., Pechnikov, A. I., Chernykh, A. V., Shcherbachev, K. D., Shikoh, A. S., Kochkova, A., Vasilev, A. A., Pearton, S. J.

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Characterization of crystal structure features of a SIMOX substrate von Eidelman, K.B., Shcherbachev, K.D., Tabachkova, N.Yu, Podgornii, D.A., Mordkovich, V.N.

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Defect structure and properties of Zn diffusion doped Si after swift Xe ion irradiation von Privezentsev, V V, Skuratov, V A, Kulikauskas, V S, Burmistrov, A A, Zilova, O S, Steinman, E A, Tereshchenko, A N, Kiselev, D A, Tabachkova, N Yu, Shcherbachev, K D

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Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator von Parshina, L. S., Khramova, O. D., Novodvorsky, O. A., Lotin, A. A., Petukhov, I. A., Putilin, F. N., Shcherbachev, K. D.

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Optical properties, defects, and composition of La3Ga5.5Ta0.5O14 crystals von Buzanov, O. A., Voronova, M. I., Zabelina, E. V., Kozlova, A. P., Kozlova, N. S., Skryleva, E. A., Spassky, D. A., Shcherbachev, K. D.

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Study of a SiO2/Si Structure Implanted with 64Zn+ and 16O+ Ions and Heat Treated in a Neutral Inert Environment von Privezentsev, V. V., Kulikauskas, V. S., Zatekin, V. V., Zinenko, V. I., Agafonov, Yu. A., Egorov, V. K., Steinman, E. A., Tereshchenko, A. N., Shcherbachev, K. D.

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Effect of annealing on the structure and phase composition of thin electro-optical lithium niobate films von Kiselev, D. A., Zhukov, R. N., Bykov, A. S., Voronova, M. I., Shcherbachev, K. D., Malinkovich, M. D., Parkhomenko, Yu. N.

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Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon von Privezentsev, V. V., Kulikauskas, V. S., Zatekin, V. V., Shcherbachev, K. D., Tabachkova, N. Yu, Eidelman, K. B., Ksenich, S. V., Batrakov, A. A.

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Structure of InP single crystals irradiated with reactor neutrons von Boiko, V.M., Bublik, V.T., Voronova, M.I., Kolin, N.G., Merkurisov, D.I., Shcherbachev, K.D.

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Mo/Al/Mo/Au-based ohmic contacts to AlGaN/GaN heterostructures von Kondakov, M. N., Chernykh, S. V., Chernykh, A. V., Gladysheva, N. B., Dorofeev, A. A., Didenko, S. I., Shcherbachev, K. D., Tabachkova, N. Yu, Kaprov, D. B.

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Electrical and structural properties of InSb crystals irradiated with reactor neutrons von Boiko, V.M., Bublik, V.T., Voronova, M.I., Kolin, N.G., Merkurisov, D.I., Shcherbachev, K.D.

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Investigation of nanostructured Al-10 wt.% Zr material prepared by ball milling for high temperature applications von Prosviryakov, A.S., Shcherbachev, K.D., Tabachkova, N.Yu

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Modification of Zn ion hot implanted Si by swift Xe ion irradiation von Privezentsev, V.V., Skuratov, V.A., Kulikauskas, V.S., Zilova, O.S., Burmistrov, A.A., Tabachkova, N.Yu, Eidelman, K.B., Shcherbachev, K.D.

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The effect of in situ photoexcitation on the generation of damaged structures during ion implantation into Si wafers von Shcherbachev, K D, Bublik, V T, Mordkovich, V N, Pazhin, D M

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