Assessing mobile ions contributions to admittance spectra and current-voltage characteristics of 3D and 2D/3D perovskite solar cells von Shikoh, Ali Sehpar, Paek, Sanghyun, Polyakov, Alexander Y., Smirnov, Nikolai B., Shchemerov, Ivan V., Saranin, Danila S., Didenko, Sergey I., Ahmad, Zubair, Touati, Farid, Nazeeruddin, Mohammad Khaja

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Dislocations introduced in n-GaN at room temperature cause conductivity inversion von Yakimov, Eugene B., Vergeles, Pavel S., Polyakov, Alexander Y., Shchemerov, Ivan V., Chernyh, A.V., Vasilev, A.A., Kochkova, A.I., Lee, In-Hwan, Pearton, S.J.

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Point defect creation by proton and carbon irradiation of α-Ga2O3 von Polyakov, Alexander Y., Nikolaev, Vladimir I., Meshkov, Igor N., Siemek, Krzysztof, Lagov, Petr B., Yakimov, Eugene B., Pechnikov, Alexei I., Orlov, Oleg S., Sidorin, Alexey A., Stepanov, Sergey I., Shchemerov, Ivan V., Vasilev, Anton A., Chernykh, Alexey V., Losev, Anton A., Miliachenko, Alexandr D., Khrisanov, Igor A., Pavlov, Yu.S., Kobets, U. A., Pearton, Stephen J.

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Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates von Polyakov, Alexander Y., Nikolaev, Vladimir I., Tarelkin, Sergey A., Pechnikov, Alexei I., Stepanov, Sergey I., Nikolaev, Andrey E., Shchemerov, Ivan V., Yakimov, Eugene B., Luparev, Nikolay V., Kuznetsov, Mikhail S., Vasilev, Anton A., Kochkova, Anastasiya I., Voronova, Marina I., Scheglov, Mikhail P., Kim, Jihyun, Pearton, Stephen J.

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Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions von Polyakov, Alexander Y., Saranin, Danila S., Shchemerov, Ivan V., Vasilev, Anton A., Romanov, Andrei A., Kochkova, Anastasiia I., Gostischev, Pavel, Chernykh, Alexey V., Alexanyan, Luiza A., Matros, Nikolay R., Lagov, Petr B., Doroshkevich, Aleksandr S., Isayev, Rafael Sh, Pavlov, Yu. S., Kislyuk, Alexander M., Yakimov, Eugene B., Pearton, Stephen J.

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Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O., Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Pearton, Stephen J.

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Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs von Polyakov, Alexander Y., Yakimov, Eugene B., Nikolaev, Vladimir I., Pechnikov, Alexei I., Miakonkikh, Andrej V., Azarov, Alexander, Lee, In-Hwan, Vasilev, Anton A., Kochkova, Anastasiia I., Shchemerov, Ivan V., Kuznetsov, Andrej, Pearton, Stephen J.

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Proton damage effects in double polymorph γ/β-Ga2O3 diodes von Polyakov, Alexander Y, Vasilev, Anton A, Kochkova, Anastasiia I, Shchemerov, Ivan V, Yakimov, Eugene B, Miakonkikh, Andrej V, Chernykh, Alexei V, Lagov, Petr B, Pavlov, Yrii S, Doroshkevich, A S, R Sh Isaev, Romanov, Andrei A, Alexanyan, Luiza A, Matros, Nikolai, Azarov, Alexander, Kuznetsov, Andrej, Pearton, Stephen

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Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O, Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Guzilova, Lyubov, Pearton, Stephen J

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Effects of sapphire substrate orientation on Sn-doped α-Ga 2 O 3 grown by halide vapor phase epitaxy using α-Cr 2 O 3 buffers von Polyakov, Alexander, Nikolaev, Vladimir, Stepanov, Sergey, Almaev, Alexei, Pechnikov, Alexei, Yakimov, Eugene, Kushnarev, Bogdan O, Shchemerov, Ivan, Scheglov, Mikhail, Chernykh, Alexey, Vasilev, Anton, Kochkova, Anastasia, Guzilova, Lyubov, Pearton, Stephen J

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Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors von Polyakov, Alexander Y., Smirnov, Nikolai B., Shchemerov, Ivan V., Chernykh, Sergey V., Oh, Sooyeoun, Pearton, Stephen J., Ren, Fan, Kochkova, Anastasia, Kim, Jihyun

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Properties of κ‐Ga 2 O 3 Prepared by Epitaxial Lateral Overgrowth von Polyakov, Alexander, Lee, In‐Hwan, Nikolaev, Vladimir, Pechnikov, Aleksei, Miakonkikh, Andrew, Scheglov, Mikhail, Yakimov, Eugene, Chikiryaka, Andrei, Vasilev, Anton, Kochkova, Anastasia, Shchemerov, Ivan, Chernykh, Alexey, Pearton, Stephen

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Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga[sub.2]O[sub.3] Polymorphs von Polyakov, Alexander Y, Yakimov, Eugene B, Nikolaev, Vladimir I, Pechnikov, Alexei I, Miakonkikh, Andrej V, Azarov, Alexander, Lee, In-Hwan, Vasilev, Anton A, Kochkova, Anastasiia I, Shchemerov, Ivan V, Kuznetsov, Andrej, Pearton, Stephen J

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Current relaxation analysis in AlGaN/GaN high electron mobility transistors von Polyakov, Alexander Y., Smirnov, N. B., Shchemerov, Ivan V., Lee, In-Hwan, Jang, Taehoon, Dorofeev, Alexey A., Gladysheva, Nadezhda B., Kondratyev, Eugene S., Turusova, Yulia A., Zinovyev, Roman A., Turutin, A. V., Ren, Fan, Pearton, S. J.

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Proton irradiation Of Ga 2 O 3 Schottky diodes and NiO/Ga 2 O 3 heterojunctions von Polyakov, Alexander Y, Saranin, Danila S, Shchemerov, Ivan V, Vasilev, Anton A, Romanov, Andrei A, Kochkova, Anastasiia I, Gostischev, Pavel, Chernykh, Alexey V, Alexanyan, Luiza A, Matros, Nikolay R, Lagov, Petr B, Doroshkevich, Aleksandr S, Isayev, Rafael Sh, Pavlov, Yu S, Kislyuk, Alexander M, Yakimov, Eugene B, Pearton, Stephen J

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Proton damage effects in double polymorph γ/β-GaO diodes von Polyakov, Alexander Y, Vasilev, Anton A, Kochkova, Anastasiia I, Shchemerov, Ivan V, Yakimov, Eugene B, Miakonkikh, Andrej V, Chernykh, Alexei V, Lagov, Petr B, Pavlov, Yrii S, Doroshkevich, A. S, Isaev, R. Sh, Romanov, Andrei A, Alexanyan, Luiza A, Matros, Nikolai, Azarov, Alexander, Kuznetsov, Andrej, Pearton, Stephen

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Proton damage effects in double polymorph γ/β-Ga 2 O 3 diodes von Polyakov, Alexander Y., Vasilev, Anton A., Kochkova, Anastasiia I., Shchemerov, Ivan V., Yakimov, Eugene B., Miakonkikh, Andrej V., Chernykh, Alexei V., Lagov, Petr B., Pavlov, Yrii S., Doroshkevich, A. S., Isaev, R. Sh, Romanov, Andrei A., Alexanyan, Luiza A., Matros, Nikolai, Azarov, Alexander, Kuznetsov, Andrej, Pearton, Stephen

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Defect States Determining Dynamic Trapping-Detrapping in β-Ga 2 O 3 Field-Effect Transistors von Polyakov, Alexander Y., Smirnov, Nikolai B., Shchemerov, Ivan V., Chernykh, Sergey V., Oh, Sooyeoun, Pearton, Stephen J., Ren, Fan, Kochkova, Anastasia, Kim, Jihyun

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Assessing mobile ions contributions to admittance spectra and current-voltage characteristics of 3D and 2D/3D perovskite solar cells von Shikoh, Ali Sehpar, Paek, Sanghyun, Polyakov, Alexander Y, Smirnov, Nikolai B, Shchemerov, Ivan, V, Saranin, Danila S, Didenko, Sergey, I, Ahmad, Zubair, Touati, Farid, Nazeeruddin, Mohammad Khaja

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