Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 von Polyakov, A.Y., Vasilev, A.A., Shchemerov, I.V., Chernykh, A.V., Shetinin, I.V., Zhevnerov, E.V., Kochkova, A.I., Lagov, P.B., Miakonkikh, A.V., Pavlov, Yu.S., Kobets, U.A., Lee, In-Hwan, Kuznetsov, A., Pearton, S.J.

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Radiation effect on the polymer-based capacitive relative humidity sensors von Shchemerov, I.V., Legotin, S.A., Lagov, P.B., Pavlov, Y.S., Tapero, K.I., Petrov, A.S., Sidelev, A.V., Stolbunov, V.S., Kulevoy, T.V., Letovaltseva, M.E., Murashev, V.N., Konovalov, M.P., Kirilov, V.N.

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On the possible nature of deep centers in Ga2O3 von Polyakov, A. Y., Kochkova, A. I., Langørgen, Amanda, Vines, Lasse, Vasilev, A., Shchemerov, I. V., Romanov, A. A., Pearton, S. J.

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors von Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, Minghan, Ren, F., Pearton, S.J.

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Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells von Polyakov, A.Y., Alexanyan, L.A., Skorikov, M.L., Chernykh, A.V., Shchemerov, I.V., Murashev, V.N., Kim, Tae-Hwan, Lee, In-Hwan, Pearton, S.J.

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Tuning electrical properties in Ga2O3 polymorphs induced with ion beams von Polyakov, A. Y., Kochkova, А. I., Azarov, A., Venkatachalapathy, V., Miakonkikh, A. V., Vasilev, A. A., Chernykh, A. V., Shchemerov, I. V., Romanov, A. A., Kuznetsov, A., Pearton, S. J.

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Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface von Polyakov, A.Y., Nikolaev, V.I., Pechnikov, A.I., Yakimov, E.B., Karpov, S. Yu, Stepanov, S.I., Shchemerov, I.V., Vasilev, A.A., Chernykh, A.V., Kuznetsov, A., Lee, In-Hwan, Pearton, S.J.

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Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm von Lee, In-Hwan, Kim, Tae-Hwan, Polyakov, A.Y., Chernykh, A.V., Skorikov, M.L., Yakimov, E.B., Alexanyan, L.A., Shchemerov, I.V., Vasilev, A.A., Pearton, S.J.

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The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3 von Polyakov, A. Y., Kuznetsov, A., Azarov, A., Miakonkikh, A. V., Chernykh, A. V., Vasilev, A. A., Shchemerov, I. V., Kochkova, A. I., Matros, N. R., Pearton, S. J.

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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers von Polyakov, A.Y., Haller, C., Butté, R., Smirnov, N.B., Alexanyan, L.A., Kochkova, A.I., Shikoh, S.A., Shchemerov, I.V., Chernykh, A.V., Lagov, P.B., Pavlov, Yu S., Carlin, J.-F., Mosca, M., Grandjean, N., Pearton, S.J.

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Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211] von Polyakov, A.Y., Alexanyan, L.A., Skorikov, M.L., Chernykh, A.V., Shchemerov, I.V., Murashev, V.N., Kim, Tae-Hwan, Lee, In-Hwan, Pearton, S.J.

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Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes von Yakimov, E. B., Nikolaev, V. I., Pechnikov, A. I., Polyakov, A.Y., Shchemerov, I.V., Vasilev, A. A., Kulanchikov, Y. O., Vergeles, P. S., Yakimov, E. E., Pearton, S. J.

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Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga 2 O 3 Schottky Diodes von Yakimov, E. B., Nikolaev, V. I., Pechnikov, A. I., Polyakov, A.Y., Shchemerov, I.V., Vasilev, A. A., Kulanchikov, Y. O., Vergeles, P. S., Yakimov, E. E., Pearton, S. J.

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Radiation effect on the polymer-based capacitive relative humidity sensors von Shchemerov, I.V, Legotin, S.A, Lagov, P.B, Pavlov, Y.S, Tapero, K.I, Petrov, A.S, Sidelev, A.V, Stolbunov, V.S, Kulevoy, T.V, Letovaltseva, M.E, Murashev, V.N, Konovalov, M.P, Kirilov, V.N

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