Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Yang, Jiancheng, Ren, F., Yang, Gwangseok, Kim, Jihyun, Kuramata, A., Pearton, S. J.

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes von Polyakov, A. Y., Haller, C., Smirnov, N. B., Shiko, A. S., Shchemerov, I. V., Chernykh, S. V., Alexanyan, L. A., Lagov, P. B., Pavlov, Yu. S., Carlin, J.-F., Mosca, M., Butté, R., Grandjean, N., Pearton, S. J.

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments von Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Lagov, P. B., Zinov'ev, R. A., Yakimov, E. B., Shcherbachev, K. D., Pearton, S. J.

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Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Pearton, S. J., Ren, Fan, Chernykh, A. V., Kochkova, A. I.

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Electron irradiation of near‐UV GaN/InGaN light emitting diodes von Lee, In‐Hwan, Polyakov, Alexander Y., Smirnov, N. B., Shchemerov, I. V., Shmidt, N. M., Tal'nishnih, N. A., Shabunina, E. I., Cho, Han‐Su, Hwang, Sung‐Min, Zinovyev, R. A., Didenko, S. I., Lagov, P. B., Pearton, S. J.

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Pearton, S. J., Fares, Chaker, Yang, Jiancheng, Ren, Fan, Kim, Jihyun, Lagov, P. B., Stolbunov, V. S., Kochkova, A.

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3 von Yakimov, E. B., Polyakov, A. Y., Shchemerov, I. V., Smirnov, N. B., Vasilev, A. A., Vergeles, P. S., Yakimov, E. E., Chernykh, A. V., Ren, F., Pearton, S. J.

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Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3 von Polyakov, A. Y., Lee, In-Hwan, Miakonkikh, Andrew, Chernykh, A. V., Smirnov, N. B., Shchemerov, I. V., Kochkova, A. I., Vasilev, A. A., Pearton, S. J.

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Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra von Polyakov, A. Y., Lee, In-Hwan, Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Ren, F., Carey, P. H., Pearton, S. J.

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Electric field dependence of major electron trap emission in bulk β-Ga2O3: Poole-Frenkel effect versus phonon-assisted tunneling von Polyakov, A Y, Lee, In-Hwan, Smirnov, N B, Shchemerov, I V, Vasilev, A A, Chernykh, A V, Pearton, S J

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors von Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, Minghan, Ren, F., Pearton, S.J.

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Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Pearton, S. J., Ren, F., Chernykh, A. V., Lagov, P. B., Kulevoy, T. V.

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Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells von Polyakov, A.Y., Alexanyan, L.A., Skorikov, M.L., Chernykh, A.V., Shchemerov, I.V., Murashev, V.N., Kim, Tae-Hwan, Lee, In-Hwan, Pearton, S.J.

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Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 von Polyakov, A Y, Smirnov, N B, Shchemerov, I V, Vasilev, A A, Yakimov, E B, Chernykh, A V, Kochkova, A I, Lagov, P B, Pavlov, Yu S, Kukharchuk, O F, Suvorov, A A, Garanin, N S, Lee, In-Hwan, Xian, Minghan, Ren, Fan, Pearton, S J

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Tuning electrical properties in Ga2O3 polymorphs induced with ion beams von Polyakov, A. Y., Kochkova, А. I., Azarov, A., Venkatachalapathy, V., Miakonkikh, A. V., Vasilev, A. A., Chernykh, A. V., Shchemerov, I. V., Romanov, A. A., Kuznetsov, A., Pearton, S. J.

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Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions von Polyakov, A. Y., Yakimov, E. B., Saranin, D. S., Chernykh, A. V., Vasilev, A. A., Gostishchev, P., Kochkova, A. I., Alexanyan, L. A., Matros, N. R., Shchemerov, I. V., Pearton, S. J.

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Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Saranin, D. S., Le, T. S., Didenko, S. I., Kuznetsov, D. V., Agresti, A., Pescetelli, S., Matteocci, F., Di Carlo, A.

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Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3 von Vasilev, A. A., Kochkova, A. I., Polyakov, A. Y., Romanov, A. A., Matros, N. R., Alexanyan, L. A., Shchemerov, I. V., Pearton, S. J.

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On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells von Shikoh, A. S., Polyakov, A. Y., Gostishchev, P., Saranin, D. S., Shchemerov, I. V., Didenko, S. I., Di Carlo, A.

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Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 (Sn) von Polyakov, A Y, Nikolaev, V I, Pechnikov, A I, Lagov, P B, Shchemerov, I V, Vasilev, A A, Chernykh, A V, Kochkova, A I, Guzilova, L, Pavlov, Yu S, Kulevoy, T V, Doroshkevich, A S, Isaev, R Sh, Panichkin, A V, Pearton, S J

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