Properties of Semipolar GaN Grown on a Si(100) Substrate von Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

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Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy von Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., Konenkov, S. D., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

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On the Structural Perfection of Large-Diameter Silicon Carbide Ingots von Bykov, Yu. O., Lebedev, A. O., Shcheglov, M. P.

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Frozen Superparaelectric State of Local Polar Regions in GdMn2O5 and Gd0.8Ce0.2MnO5 von Sanina, V. A., Khannanov, B. Kh, Golovenchits, E. I., Shcheglov, M. P.

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Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition von Nikolaev, V. I., Timashov, R. B., Stepanov, A. I., Stepanov, S. I., Chikiryaka, A. V., Shcheglov, M. P., Polyakov, A. Ya

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Electric Polarization in YCrO3 Induced by Restricted Polar Domains of Magnetic and Structural Natures von Sanina, V. A., Khannanov, B. Kh, Golovenchits, E. I., Shcheglov, M. P.

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A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films von Koryakin, A. A., Kukushkin, S. A., Osipov, A.V., Sharofidinov, Sh. Sh, Shcheglov, M. P.

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Electric Polarization in ErCrO3 Induced by Restricted Polar Domains von Sanina, V. A., Khannanov, B. Kh, Golovenchits, E. I., Shcheglov, M. P.

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Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers von Kyutt, R. N., Shcheglov, M. P.

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Separation of Phases and Charge States in Relaxor Ferroelectric PbCo1/3Nb2/3O3 von Khannanov, B. Kh, Zalessky, V. G., Golovenchits, E. I., Sanina, V. A., Smirnova, T. A., Shcheglov, M. P., Bokov, V. A., Lushnikov, S. G.

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Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate von Nikolaev, V. I., Pechnikov, A. I., Guzilova, L. I., Chikiryaka, A. V., Shcheglov, M. P., Nikolaev, V. V., Stepanov, S. I., Vasil’ev, A. A., Shchemerov, I. V., Polyakov, A. Ya

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Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate von Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

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Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering von Bessolov, V. N., Gruzinov, N. D., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.

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A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures von Lebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu, Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P.

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Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate von Bessolov, V. N., Gushchina, E. V., Konenkova, E. V., L’vova, T. V., Panteleev, V. N., Shcheglov, M. P.

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Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate von Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

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X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire von Kyutt, R. N., Shcheglov, M. P., Ratnikov, V. V., Kalmykov, A. E.

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique von Malin, T.V., Mansurov, V.G., Galitsyn, Yu.G., Milakhin, D.S., Protasov, D.Yu, Ber, B.Ya, Kazantsev, D.Yu, Ratnikov, V.V., Shcheglov, M.P., Smirnov, A.N., Davydov, V.Yu, Zhuravlev, K.S.

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Bulk gallium nitride: preparation and study of properties von Zhilyaev, Yu. V., Nasonov, A. V., Raevski, S. D., Rodin, S. N., Shcheglov, M. P., Davydov, V. Yu

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Electric Polarization in ErCrO.sub.3 Induced by Restricted Polar Domains von Sanina, V. A, Khannanov, B. Kh, Golovenchits, E. I, Shcheglov, M. P

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