A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2 von SHATZKES, M, LLOYD, J. R

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Electromigration-induced compressive stresses in encapsulated thin-film conductors with and without the presence of drift velocity von Hemmert, R. S., Shatzkes, M.

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Imaging of the Parathyroid Glands von Phillips, C. Douglas, MD, FACR, Shatzkes, Deborah R., MD

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Impact ionization model for dielectric instability and breakdown von DiStefano, T. H., Shatzkes, M.

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ELECTRICAL RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS: THE CASE OF SPECULAR REFLECTION AT EXTERNAL SURFACES von Mayadas, A. F., Shatzkes, M., Janak, J. F.

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Electron tunneling at Al-SiO2 interfaces von Av-Ron, M., Shatzkes, M., DiStefano, T. H., Gdula, R. A.

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Measurement of MOSFET constants von De La Moneda, F.H., Kotecha, H.N., Shatzkes, M.

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Letter From the Guest Editors: Thyroid and Parathyroid Imaging von Phillips, C. Douglas, MD, FACR, Shatzkes, Deborah R., MD

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On the nature of conduction and switching in SiO2 von Shatzkes, M., Av-Ron, M., Anderson, R. M.

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Characteristic length and time in electromigration von Shatzkes, Morris, Huang, Yusue

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Current-voltage characteristics of Al–SiO2–Si structures von Av-Ron, M., Shatzkes, M.

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Electromigration-induced compressive stresses in encapsulated thin-film conductors with and witout the presence of drift velocity von HEMMERT, R. S, SHATZKES, M

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Distribution of dopant in SiO2-Si von Av-Ron, M., Shatzkes, M., Burkhardt, P. J., Cadoff, I.

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Injection into insulators in the presence of space charge von Shatzkes, Morris

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Hole-trapping effects in reverse-biased Si-doped Al Schottky-barrier diodes von Sullivan, M. J., Reith, T. M., Av-Ron, M., Shatzkes, M.

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Surface Impedance of Thin Metal Films under Anomalous Skin Effect Conditions von Mayadas, A. F., Henry, G. R., Shatzkes, M.

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Reactor and Linear Accelerator Induced Effects in Dielectrics von Frankovsky, F. A., Shatzkes, M.

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On the structure factor of large angle boundaries von Chaudhari, P., Shatzkes, M., Mayadas, A. F.

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Determination of breakdown rates and defect densities in SiO2

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Impact ionization and positive charge in thin SiO2 films von Shatzkes, Morris, Av-Ron, Moshe

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