A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2 von SHATZKES, M, LLOYD, J. R

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Impact of post annealing on the electrical properties of silver nanofilms von Udachan, Shiva. L., Ayachit, N. H., Udachan, L. A, Siddanna, Shivakumar, Kolkundi, Shrishail. S., Ramya, S

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Parry Romberg Syndrome: 7 Cases and Literature Review von Wong, M, Phillips, C D, Hagiwara, M, Shatzkes, D R

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Electromigration-induced compressive stresses in encapsulated thin-film conductors with and without the presence of drift velocity von Hemmert, R. S., Shatzkes, M.

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ELECTRICAL RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS: THE CASE OF SPECULAR REFLECTION AT EXTERNAL SURFACES von Mayadas, A. F., Shatzkes, M., Janak, J. F.

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Impact ionization model for dielectric instability and breakdown von DiStefano, T. H., Shatzkes, M.

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Impact ionization and positive charge in thin SiO2 films von Shatzkes, Morris, Av-Ron, Moshe

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Determination of breakdown rates and defect densities in SiO2 von Shatzkes, Morris, Av-ron, Moshe

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On the nature of conduction and switching in SiO2 von Shatzkes, M., Av-Ron, M., Anderson, R. M.

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Determination of breakdown rates and defect densities in SiO2

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Current-voltage characteristics of Al–SiO2–Si structures von Av-Ron, M., Shatzkes, M.

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Distribution of dopant in SiO2-Si von Av-Ron, M., Shatzkes, M., Burkhardt, P. J., Cadoff, I.

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Characteristic length and time in electromigration von Shatzkes, Morris, Huang, Yusue

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Determination of reliability from ramped voltage breakdown experiments: application to dual dielectric MIM capacitors : M. Shatzkes, M. Av-Ron and K. V. Srikrishan. Proc. IEEE Reliab. Phys. Conf. 138 (1984)

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Reactor and Linear Accelerator Induced Effects in Dielectrics von Frankovsky, F. A., Shatzkes, M.

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Neutron and Gamma Sensitivities of Dynamic Detectors von Martin, J. A., Shatzkes, M., Kloepper, R. M.

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A Gamified Social Media-Based Head and Neck Radiology Education Initiative of the American Society of Head and Neck Radiology: Viewership and Engagement Trends at 3 Years von Koontz, N A, Tomblinson, C M, Shatzkes, D R, Glastonbury, C M, Phillips, C D, Dean, K, Strauss, S, Agarwal, M, Robson, C D, Wiggins, R H

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Electron tunneling at Al-SiO2 interfaces von Av-Ron, M., Shatzkes, M., DiStefano, T. H., Gdula, R. A.

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Measurement of MOSFET constants von De La Moneda, F.H., Kotecha, H.N., Shatzkes, M.

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Injection into insulators in the presence of space charge von Shatzkes, Morris

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