Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure von Smirnov, A. M., Kremleva, A. V., Sharofidinov, Sh. Sh, Romanov, A. E.

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Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms von Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V., Sharofidinov, Sh. Sh

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Phase Transformations in Gallium Oxide Layers von Osipov, A. V., Sharofidinov, Sh. Sh, Kremleva, A. V., Osipova, E. V., Smirnov, A. M., Kukushkin, S. A.

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Growing III–V Semiconductor Heterostructures on SiC/Si Substrates von Sharofidinov, Sh. Sh, Kukushkin, S. A., Red’kov, A. V., Grashchenko, A. S., Osipov, A. V.

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Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate von Seredin, P.V., Sharofidinov, Sh. Sh, Goloshchapov, D.L., Peshkov, Y.A., Ivkov, S.A., Buylov, N.S., Eremeev, K.A., Kukushkin, S.A.

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Stress–strain state and piezoelectric polarization in orthorhombic Ga2O3 thin films depending on growth orientation von Smirnov, A.M., Kremleva, A.V., Ivanov, A.Yu, Myasoedov, A.V., Sokura, L.A., Kirilenko, D.A., Sharofidinov, Sh.Sh, Romanov, A.E.

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A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates von Kukushkin, S. A., Sharofidinov, Sh. Sh

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S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties von Seredin, P.V., Buylov, N.S., Goloshchapov, D.L., Ivkov, S.A., Matyukhina, E.P., Arsentyev, I.N., Nashchekin, A.V., Sharofidinov, Sh.Sh, Mizerov, A.M., Pirogov, E.V., Sobolev, M.S.

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Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates von Grashchenko, A S, Kukushkin, S A, Osipov, A V, Sharofidinov, Sh Sh

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Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications von Kondratenko, T. T., Grashchenko, A. S., Osipov, A. V., Redkov, A. V., Ubyivovk, E. V., Sharofidinov, Sh. Sh, Kukushkin, S. A.

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Misfit Stress Relaxation in α-Ga2O3/α-Al2O3 Heterostructures via Formation of Misfit Dislocations von Smirnov, A. M., Kremleva, A. V., Sharofidinov, Sh. Sh, Bugrov, V. E., Romanov, A. E.

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A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films von Koryakin, A. A., Kukushkin, S. A., Osipov, A.V., Sharofidinov, Sh. Sh, Shcheglov, M. P.

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Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates von Kukushkin, S. A., Osipov, A. V., Redkov, A. V., Sharofidinov, Sh. Sh

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Studying the Pyroelectric Effect in AlN Epilayers von Gavrilov, G. A., Kapralov, A. F., Muratikov, K. L., Panyutin, E. A., Sotnikov, A. V., Sotnikova, G. Yu, Sharofidinov, Sh. Sh

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Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by Chloride-Hydride Epitaxy on a Silicon Carbide-on-Silicon Substrate von Solnyshkin, A.V., Sergeeva, O. N., Shustova, O. A., Sharofidinov, Sh. Sh, Staritsyn, M. V., Kaptelov, E. Yu, Kukushkin, S. A., Pronin, I. P.

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Self-Organization of the Composition of AlxGa1 – xN Films Grown on Hybrid SiC/Si Substrates von Kukushkin, S. A., Sharofidinov, Sh. Sh, Osipov, A. V., Grashchenko, A. S., Kandakov, A. V., Osipova, E. V., Kotlyar, K. P., Ubyivovk, E. V.

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Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE von Kukushkin, S. A., Osipov, A. V., Redkov, A. V., Stozharov, V. M., Ubiyvovk, E. V., Sharofidinov, Sh. Sh

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Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films von Sergeeva, O. N., Solnyshkin, A. V., Kiselev, D. A., Il’ina, T. S., Kukushkin, S. A., Sharofidinov, Sh. Sh, Kaptelov, E. Yu, Pronin, I. P.

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Specific Features of the Pyroelectric Effect in Epitaxial Aluminum Nitride Layers Obtained on Si Substrates von Gavrilov, G. A., Muratikov, K. L., Panyutin, E. A., Sotnikova, G. Yu, Sharofidinov, Sh. Sh

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Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy von Seredin, P. V., Barkov, K. A., Goloshchapov, D. L., Lenshin, A. S., Khudyakov, Yu. Yu, Arsentiev, I. N., Lebedev, A. A., Sharofidinov, Sh. Sh, Mizerov, A. M., Kasatkin, I. A., Prutskij, Tatiana

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