Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure von Liu, Hongyu, Li, Jianing, Lv, Yuanjie, Wang, Yuangang, Lu, Xiaoli, Dun, Shaobo, Han, Tingting, Guo, Hongyu, Bu, Aimin, Ma, Xiaohua, Feng, Zhihong, Hao, Yue

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2.83-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2 von Han, Tingting, Wang, Yuangang, Lv, Yuanjie, Dun, Shaobo, Liu, Hongyu, Bu, Aimin, Feng, Zhihong

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Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model von Du, Jiangfeng, Yan, Hui, Yin, Chenggong, Feng, Zhihong, Dun, Shaobo, Yu, Qi

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11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate von Hu, Yansheng, Wang, Yuangang, Wang, Wei, Lv, Yuanjie, Guo, Hongyu, Zhang, Zhirong, Yu, Hao, Song, Xubo, zhou, Xingye, Han, Tingting, Dun, Shaobo, Liu, Hongyu, Bu, Aimin, Feng, Zhihong

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Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs von Zhou, Xingye, Feng, Zhihong, Wang, Li, Wang, Yuangang, Lv, Yuanjie, Dun, Shaobo, Cai, Shujun

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Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping von Liu, Wei, Lu, Tiecheng, Chen, Qingyun, Hu, Youwen, Dun, Shaobo, Shlimak, Issai

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High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET von Wang, Yuangang, Guo, Hongyu, Fang, Yulong, Feng, Zhihong, Cai, Shujun, Lv, Yuanjie, Zhou, Xingye, Yin, Jiayun, Han, Tingting, Gu, Guodong, Song, Xubo, Tan, Xin, Dun, Shaobo

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Polycrystalline diamond MESFETs by Au-mask technology for RF applications von Feng, ZhiHong, Wang, JingJing, He, ZeZhao, Dun, ShaoBo, Yu, Cui, Liu, JinLong, Zhang, PingWei, Guo, Hui, Li, ChengMing, Cai, ShuJun

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Demonstration of beta-Ga2O3 Junction Barrier Schottky Diodes With a Baligas Figure of Merit of 0.85 GWcm(2) or a 5A700 V Handling Capabilities von Lv, Yuanjie, Wang, Yuangang, Fu, Xingchang, Dun, Shaobo, Sun, Zhaofeng, Liu, Hongyu, Zhou, Xingye, Song, Xubo, Dang, Kui, Liang, Shixiong, Zhang, Jincheng, Zhou, Hong, Feng, Zhihong, Cai, Shujun, Hao, Yue

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AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications von 宋旭波 吕元杰 顾国栋 王元刚 谭鑫 周幸叶 敦少博 徐鹏 尹甲运 魏碧华 冯志红 蔡树军

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Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors von Dun, Shaobo, Jiang, Yang, Li, Jingqiang, Fang, Yulong, Yin, Jiayun, Liu, Bo, Wang, Jingjing, Chen, Hong, Feng, Zhihong, Cai, Shujun

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Low ohmic contact AlN/GaN HEMTs grown by MOCVD von Gu, Guodong, Dun, Shaobo, Lü, Yuanjie, Han, Tingting, Xu, Peng, Yin, Jiayun, Feng, Zhihong

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10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation von Liu, Hongyu, Wang, Yuangang, Lv, Yuanjie, Han, Shida, Han, Tingting, Dun, Shaobo, Guo, Hongyu, Bu, Aimin, Feng, Zhihong

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DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment von Song, Xubo, Gu, Guodong, Dun, Shaobo, Lü, Yuanjie, Han, Tingting, Wang, Yuangang, Xu, Peng, Feng, Zhihong

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Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD von 刘波 尹甲运 吕元杰 敦少博 张雄文 冯志红 蔡树军

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Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances von Du, Jiangfeng, Xu, Peng, Wang, Kang, Yin, Chenggong, Liu, Yang, Feng, Zhihong, Dun, Shaobo, Yu, Qi

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Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier von Wu, Feihong, Wang, Yuangang, Guangzhong Jian, Xu, Guangwei, Zhou, Xuanze, Guo, Wei, Du, Jiahong, Liu, Qi, Dun, Shaobo, Yu, Zhaoan, Lv, Yuanjie, Feng, Zhihong, Cai, Shujun, Long, Shibing

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600 V/7 A Large-Size RESURF β-Ga2O3 Schottky Barrier Diode With High-Temperature Storage Test von Wei, Yuxi, Luo, Xiaorong, Wang, Yuangang, Peng, Xiaosong, Linyao Hao, Zhao, Kai, Wei, Jie, Li, Xiangnan, Jiang, Zhuolin, Dun, Shaobo, Feng, Zhihong

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600 V/7 A Large-Size RESURF β-Ga 2 O 3 Schottky Barrier Diode With High-Temperature Storage Test von Wei, Yuxi, Luo, Xiaorong, Wang, Yuangang, Peng, Xiaosong, Hao, Linyao, Zhao, Kai, Wei, Jie, Li, Xiangnan, Jiang, Zhuolin, Dun, Shaobo, Feng, Zhihong

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600 V/7 A Large-Size RESURF \beta -Ga } O } Schottky Barrier Diode With High-Temperature Storage Test von Wei, Yuxi, Luo, Xiaorong, Wang, Yuangang, Peng, Xiaosong, Hao, Linyao, Zhao, Kai, Wei, Jie, Li, Xiangnan, Jiang, Zhuolin, Dun, Shaobo, Feng, Zhihong

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