Low dielectric constant materials for microelectronics von Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., Yanovitskaya, Z. S.

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Low-k dielectric materials von Shamiryan, D, Abell, T, Iacopi, F, Maex, K

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Improving mechanical robustness of ultralow- k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening von Urbanowicz, A. M., Vanstreels, K., Verdonck, P., Shamiryan, D., De Gendt, S., Baklanov, M. R.

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Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma von Shamiryan, D., Baklanov, M. R., Vanhaelemeersch, S., Maex, K.

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High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants von Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.

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Effect of energetic ions on plasma damage of porous SiCOH low- k materials von Kunnen, E., Baklanov, M. R., Franquet, A., Shamiryan, D., Rakhimova, T. V., Urbanowicz, A. M., Struyf, H., Boullart, W.

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Russian MEMS production of European quality von Shamiryan, D.

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Dry etching process for bulk finFET manufacturing von Shamiryan, D., Redolfi, A., Boullart, W.

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In-line control of Si loss after post ion implantation strip von Shamiryan, D., Radisic, D., Boullart, W.

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Diffusion of solvents in thin porous films von Shamiryan, D., Baklanov, M.R., Lyons, P., Beckx, S., Boullart, W., Maex, K.

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Charging and the secondary electron–electron emission on a trench surface: broadening and shift of ion energy spectrum at plasma trench etching von Palov, A P, Mankelevich, Yu A, Rakhimova, T V, Shamiryan, D

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Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques von Redolfi, A., Kubicek, S., Rooyackers, R., Kim, M.-S., Sleeckx, E., Devriendt, K., Shamiryan, D., Vandeweyer, T., Delande, T., Horiguchi, N., Togo, M., Wouters, J.M.D., Jurczak, M., Hoffmann, T., Cockburn, A., Gravey, V., Diehl, D.L.

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Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low- k materials von Kunnen, E., Barkema, G.T., Maes, C., Shamiryan, D., Urbanowicz, A., Struyf, H., Baklanov, M.R.

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Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films von Hoyas, A. Martin, Schuhmacher, J., Shamiryan, D., Waeterloos, J., Besling, W., Celis, J. P., Maex, K.

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Investigation of barrier and slurry effects on the galvanic corrosion of copper von Ernur, D, Kondo, S, Shamiryan, D, Maex, K

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Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density von Degroote, B., Rooyackers, R., Vandeweyer, T., Collaert, N., Boullart, W., Kunnen, E., Shamiryan, D., Wouters, J., Van Puymbroeck, J., Dixit, A., Jurczak, M.

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Factors affecting an efficient sealing of porous low- k dielectrics by physical vapor deposition Ta(N) thin films von Iacopi, F., Tőkei, Zs, Le, Q. T., Shamiryan, D., Conard, T., Brijs, B., Kreissig, U., Van Hove, M., Maex, K.

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Experimental and Theoretical Studies of Radical Production in RF CCP Discharge at 81-MHz Frequency in \hbox and \hbox Mixtures von Rakhimova, T.V., Braginsky, O.V., Klopovskiy, K.S., Kovalev, A.S., Lopaev, D.V., Proshina, O.V., Rakhimov, A.T., Shamiryan, D., Vasilieva, A.N., Voloshin, D.G.

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Oxygen chemiluminescence in He plasma as a method for plasma damage evaluation von Urbanowicz, A.M., Shamiryan, D., Baklanov, M.R., De Gendt, S.

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Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions von Shamiryan, D, Weidner, K, Gray, W.D, Baklanov, M.R, Vanhaelemeersch, S, Maex, K

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