Simulation analysis of a novel fully depleted SOI MOSFET: Electrical and thermal performance improvement through trapezoidally doped channel and silicon–nitride buried insulator von Shahnazarisani, Hadi, Mohammadi, Saeed

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A novel LDMOS structure using P-trench for high performance applications von Orouji, Ali A., Allah Mansoori, Hojjat, Dideban, A., Shahnazarisani, Hadi

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Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal–semiconductor field effect transistor von Orouji, Ali A., Shahnazarisani, Hadi, Anvarifard, Mohammad K.

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A novel SOI MESFET by $$\uppi $$ π -shaped gate for improving the driving current von Shahnazarisani, Hadi, Orouji, Ali A., Anvarifard, Mohammad K.

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A novel SOI MESFET by \(\uppi \) -shaped gate for improving the driving current von Shahnazarisani, Hadi, Orouji, Ali A, Anvarifard, Mohammad K

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A novel SOI MESFET by π-shaped gate for improving the driving current von Shahnazarisani, Hadi, Orouji, Ali A., Anvarifard, Mohammad K.

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A Novel MESFET structure by U-shape buried oxide for improving the DC and RF Characteristics von Shahnazarisani, Hadi, Orouji, Ali A.

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