Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3 von Shahin, David I., Tadjer, Marko J., Wheeler, Virginia D., Koehler, Andrew D., Anderson, Travis J., Eddy, Charles R., Christou, Aris

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Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs von Koehler, Andrew D., Anderson, Travis J., Tadjer, Marko J., Weaver, Bradley D., Greenlee, Jordan D., Shahin, David I., Hobart, Karl D., Kub, Francis J.

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Vertical GaN Junction Barrier Schottky Diodes von Koehler, Andrew D., Anderson, Travis J., Tadjer, Marko J., Nath, Anindya, Feigelson, Boris N., Shahin, David I., Hobart, Karl D., Kub, Francis J.

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A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance von Tadjer, Marko J., Anderson, Travis J., Koehler, Andrew D., Eddy, Charles R., Shahin, David I., Hobart, Karl D., Kub, Fritz J.

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Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3 von Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Eddy, Charles R.

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Radiation Effects in Diamond pHEMTs von Thapa, Aayush, Shahin, David, Christou, Aris

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Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3 von Tadjer, Marko J., Wheeler, Virginia D., Shahin, David I., Eddy, Charles R., Kub, Fritz J.

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Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition von Anderson, Travis J., Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Christou, Aris, Kub, Francis J., Eddy, Charles R.

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(Invited) Achieving Vertical Trench-Gate GaN MOSFETs via Process Optimization von Shahin, David I, Anderson, Travis J, Christou, Aristos

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(Invited) High Power Diamond Devices with 2-D Transport Channels von Shahin, David I, Christou, Aristos, Butler, James E

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GaN/Si(111) Device Defects and Degradation Mechanisms von Christou, Aristos, Shahin, David

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Cracking up von Tandon, Rajan, Shahin, David, Swiler, Thomas P.

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Ultraviolet detector based on graphene/SiC heterojunction von Anderson, Travis J., Hobart, Karl D., Greenlee, Jordan D., Shahin, David I., Koehler, Andrew D., Tadjer, Marko J., Imhoff, Eugene A., Myers-Ward, Rachael L., Christou, Aris, Kub, Francis J.

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Thermal etching of nanocrystalline diamond films von Shahin, David I., Anderson, Travis J., Feygelson, Tatyana I., Pate, Bradford B., Wheeler, Virginia D., Greenlee, Jordan D., Hite, Jennifer K., Tadjer, Marko J., Christou, Aristos, Hobart, Karl D.

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Band Alignments of Atomic Layer Deposited ZrO 2 and HfO 2 High-k Dielectrics with (-201) β-Ga 2 O 3 von Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Eddy, Charles R.

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Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga 2 O 3 von Tadjer, Marko J., Wheeler, Virginia D., Shahin, David I., Eddy, Charles R., Kub, Fritz J.

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Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO 2 gate dielectric deposited by atomic layer deposition von Anderson, Travis J., Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Christou, Aris, Kub, Francis J., Eddy, Charles R.

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ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices von Wheeler, Virginia D., Anderson, Travis J, Ahn, Shihyun, Shahin, David I, Tadjer, Marko J, Koehler, Andrew D., Hobart, Karl D, Ren, Fan, Kub, Francis J, Christou, Aris, Eddy, Charles R.

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Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs von Shahin, David I., Anderson, Travis J., Wheeler, Virginia D., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Eddy, Charles R., Kub, Francis J., Christou, Aris

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(Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs von Koehler, Andrew D., Anderson, Travis J, Specht, Petra, Weaver, Brad D, Greenlee, Jordan D, Tadjer, Marko J, Shahin, David I, Hobart, Karl D, Kub, Francis J

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