Semiconductor characterization and analytical technology von Shaffner, T.J.

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Excitonic transitions in β-FeSi2 epitaxial films and single crystals von Birdwell, A. G., Shaffner, T. J., Chandler-Horowitz, D., Buh, G. H., Rebien, M., Henrion, W., Stauß, P., Behr, G., Malikova, L., Pollak, F. H., Littler, C. L., Glosser, R., Collins, S.

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Review of CD Measurement and Scatterometry von Thony, Philippe, Herisson, David, Henry, Daniel, Severgnini, Ermes, Vasconi, Mauro

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Status and Prospects For VUV Ellipsometry (Applied to High K and Low K Materials) von Edwards, N V

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Impact of Low-k Dielectrics on Electromigration Reliability for Cu Interconnects von Ho, Paul S, Lee, Ki-Don, Ogawa, Ennis T, Yoon, Sean, Lu, Xia

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Recent progress and insights in two-dimensional carrier profiling using scanning spreading resistance microscopy von Eyben, P, Alvarez, D, Clarysse, T, Denis, S, Vandervorst, W

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Carrier Illumination as a tool to probe implant dose and electrical activation von Vandervorst, W, Clarysse, T, Brijs, B, Loo, R, Peytier, Y, Pawlak, B J, Budiarto, E, Borden, P

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A Model for Step Height, Edge Slope and Linewidth Measurements Using AFM von Zhao, Xuezeng, Vorburger, Theodore V, Fu, Joseph, Song, John, Nguyen, Cattien V

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Critical Dimension Calibration Standards for ULSI Metrology von Allen, Richard A, Cresswell, Michael W, Murabitom, Christine E, Dixson, Ronald G, Bogardus, E Hal

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Applications of UV-Raman Spectroscopy to Microelectronic Materials and Devices von Liu, Ran, Canonico, Michael

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In-line, Non-destructive Electrical Metrology of Nitrided Silicon Dioxide and High-k Gate Dielectric Layers von Hillard, Robert J, Hung, P Y, Chism, William, Ye, C Win, Howland, William H, Tan, Louison C, Kalnas, Christine E

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Characterization of Organic Contaminants Outgassed from Materials Used in Semiconductor Fabs/Processing von Sun, Peng, Ayre, Caroline, Wallace, Matthew

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Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques von Anderle, M, Barozzi, M, Bersani, M, Giubertoni, D, Lazzeri, P

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Direct to digital holography for high aspect ratio inspection of semiconductor wafers von Thomas Jr., C.E., Hunt, Martin A, Bahm, Tracy M, Baylor, Larry R, Bingham, Philip R, Chidley, Matthew D, Dai, Xiaolong, Delahanty, Robert J, El-Khashab, Ayman, Gilbert, Judd M

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Assessment of Ultra-Thin SiO2 Film Thickness Measurement Precision by Ellipsometry von Chandler-Horowitz, D, Nguyen, N V, Ehrstein, J R

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Advances in X-ray Reflectivity (XRR) and X-ray Fluorescence (XRF) Measurements Provide Unique Advantages for Semiconductor Applications von Spear, Jennifer, Murakami, Hiroyuki, Terada, Shinichi

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Bevel Depth Profiling SIMS for Analysis of Layer Structures von Gillen, Greg, Wight, Scott, Chi, Peter, Fahey, Albert, Verkouteren, Jennifer, Windsor, Eric, Fenner, D B

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Measurement of Gate-Oxide Film Thicknesses by X-ray Photoelectron Spectroscopy von Powell, C J, Jablonski, A

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Assessing the resolution limits of scanning spreading resistance microscopy and scanning capacitance microscopy von Eyben, P, Duhayon, N, Alvarez, D, Vandervorst, W

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Correlation of Surface and Film Chemistry with Mechanical Properties in Interconnects von Zhou, Ying, Xu, Guanghai, Scherban, Tracey, Leu, Jihperng, Kloster, Grant, Wu, Chih-I

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