Nitrogen-Related Defects in Crystalline Silicon von Sgourou, E. N., Sarlis, N., Chroneos, A., Londos, C. A.

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Carbon related defects in irradiated silicon revisited von Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

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Doping strategies to control A-centres in silicon: insights from hybrid density functional theory von Wang, H, Chroneos, A, Londos, C. A, Sgourou, E. N, Schwingenschlögl, U

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Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results von Sgourou, E. N., Panayiotatos, Y., Vovk, R. V., Kuganathan, N., Chroneos, A.

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Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective von Londos, C. A., Sgourou, E. N., Chroneos, A.

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Vacancy-oxygen defects in silicon: the impact of isovalent doping von Londos, C. A., Sgourou, E. N., Hall, D., Chroneos, A.

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Impact of isovalent defect engineering strategies on carbon-related clusters in silicon von Londos, C. A., Sgourou, E. N., Chroneos, A.

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Infrared study of defects in nitrogen-doped electron irradiated silicon von Sgourou, E. N., Angeletos, T., Chroneos, A., Londos, C. A.

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Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon von Chroneos, A., Londos, C. A., Sgourou, E. N.

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Point defect engineering strategies to suppress A-center formation in silicon von Chroneos, A., Londos, C. A., Sgourou, E. N., Pochet, P.

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Phosphorous–vacancy–oxygen defects in silicon von Wang, H., Chroneos, A., Hall, D., Sgourou, E. N., Schwingenschlögl, U.

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Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon von Londos, C. A., Sgourou, E. N., Chroneos, A.

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Relative concentrations of carbon related defects in silicon von Christopoulos, S.-R. G., Parfitt, D. C., Sgourou, E. N., Londos, C. A., Vovk, R. V., Chroneos, A.

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Controlling A-center concentration in silicon through isovalent doping: mass action analysis von Christopoulos, S.-R. G., Parfitt, D. C., Sgourou, E. N., Londos, C. A., Vovk, R. V., Chroneos, A.

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Oxygen defect processes in silicon and silicon germanium von Chroneos, A., Sgourou, E. N., Londos, C. A., Schwingenschlögl, U.

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Vacancy-oxygen defects in p -type Si1−xGex von Sgourou, E. N., Londos, C. A., Chroneos, A.

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Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint von Chroneos, A., Londos, C. A., Sgourou, E. N., Vovk, R. V.

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G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach von Wang, H., Chroneos, A., Londos, C. A., Sgourou, E. N., Schwingenschlögl, U.

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Interaction of n -type dopants with oxygen in silicon and germanium von Chroneos, A., Sgourou, E. N., Londos, C. A.

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IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon von Sgourou, E. N., Angeletos, T., Chroneos, A., Londos, C. A.

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