Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts von Reshanov, Sergey A., Emtsev, Konstantin V., Speck, Florian, Gao, Kun-Yuan, Seyller, Thomas K., Pensl, Gerhard, Ley, Lothar

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Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts: Silicon Carbide. Current Trends in Research and Applications von RESHANOV, Sergey A, EMTSEV, Konstantin V, SPECK, Florian, GAO, Kun-Yuan, SEYLLER, Thomas K, PENSL, Gerhard, LEY, Lothar

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide von Seyller, Thomas, Emtsev, Konstantin V, Bostwick, Aaron, Horn, Karsten, Jobst, Johannes, Kellogg, Gary L, Ley, Lothar, McChesney, Jessica L, Ohta, Taisuke, Reshanov, Sergey A, Röhrl, Jonas, Rotenberg, Eli, Schmid, Andreas K, Waldmann, Daniel, Weber, Heiko B

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Quantum oscillations and quantum Hall effect in epitaxial graphene von Jobst, Johannes, Waldmann, Daniel, Speck, Florian, Hirner, Roland, Maude, Duncan K., Seyller, Thomas, Weber, Heiko B.

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Hell and High Water: Practice-Relevant Adaptation Science von Moss, R. H., Meehl, G. A., Lemos, M. C., Smith, J. B., Arnold, J. R., Arnott, J. C., Behar, D., Brasseur, G. P., Broomell, S. B., Busalacchi, A. J., Dessai, S., Ebi, K. L., Edmonds, J. A., Furlow, J., Goddard, L., Hartmann, H. C., Hurrell, J. W., Katzenberger, J. W., Liverman, D. M., Mote, P. W., Moser, S. C., Kumar, A., Pulwarty, R. S., Seyller, E. A., Turner, B. L., Washington, W. M., Wilbanks, T. J.

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Morphology of graphene thin film growth on SiC(0001) von Ohta, Taisuke, El Gabaly, Farid, Bostwick, Aaron, McChesney, Jessica L, Emtsev, Konstantin V, Schmid, Andreas K, Seyller, Thomas, Horn, Karsten, Rotenberg, Eli

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Symmetry breaking in few layer graphene films von Bostwick, Aaron, Ohta, Taisuke, McChesney, Jessica L, Emtsev, Konstantin V, Seyller, Thomas, Horn, Karsten, Rotenberg, Eli

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Luminescence, Patterned Metallic Regions, and Photon-Mediated Electronic Changes in Single-Sided Fluorinated Graphene Sheets von Walter, Andrew Leigh, Sahin, Hasan, Jeon, Ki-Joon, Bostwick, Aaron, Horzum, Seyda, Koch, Roland, Speck, Florian, Ostler, Markus, Nagel, Peter, Merz, Michael, Schupler, Stefan, Moreschini, Luca, Chang, Young Jun, Seyller, Thomas, Peeters, Francois M, Horn, Karsten, Rotenberg, Eli

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Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy von Seyller, Thomas, Riley, J.D., Emtsev, Konstantin V., Speck, Florian, Stojanov, P., Ley, Lothar, Leckey, R.C.G.

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Transport properties of high-quality epitaxial graphene on 6H-SiC(0001) von Jobst, Johannes, Waldmann, Daniel, Speck, Florian, Hirner, Roland, Maude, Duncan K., Seyller, Thomas, Weber, Heiko B.

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Electronic Structure of Graphite/6H-SiC Interfaces von Emtsev, Konstantin V., Gao, Kun Yuan, Speck, Florian, Seyller, Thomas, Ley, Lothar

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Transport properties of high-quality epitaxial graphene on 6H-SiC(0001): Graphene von JOBST, Johannes, WALDMANN, Daniel, SPECK, Florian, HIRNER, Roland, MAUDE, Duncan K, SEYLLER, Thomas, WEBER, Heiko B

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Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001) von Emtsev, Konstantin V., Jobst, Johannes, Seyller, Thomas, Waldmann, Daniel, Weber, Heiko B.

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Temperature Facilitated ECR-Etching for Isotropic SiC Structuring von Pezoldt, Joerg, Niebelschütz, Florentina, Stauden, Thomas, Tonisch, Katja

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Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy von Emtsev, Konstantin V., Hundhausen, Martin, Seyller, Thomas, Ley, Lothar, Röhrl, Jonas

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4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3 von Pensl, Gerhard, Gao, Kun Yuan, Beljakowa, Svetlana, Speck, Florian, Seyller, Thomas, Frank, Thomas

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Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy von Emtsev, Konstantin V., Seyller, Thomas, Graupner, R., Ley, Lothar

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Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100) von Tadich, A., Huwald, E., Seyller, Thomas, Riley, J.D., Emtsev, Konstantin V., Ley, Lothar, Broekman, L., Leckey, R.C.G.

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The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC von Tadich, A., James, D., Polcik, M., Seyller, Thomas, Riley, J.D., Emtsev, Konstantin V., Graupner, R., Ley, Lothar, Leckey, R.C.G., Sieber, N.

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Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition von Pensl, Gerhard, Tadich, A., Gao, Kun Yuan, Seyller, Thomas, Riley, J.D., Ciobanu, Florin, Ley, Lothar, Leckey, R.C.G.

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