Transient characteristics of GaN-based heterostructure field-effect transistors von Kohn, E., Daumiller, I., Kunze, M., Neuburger, M., Seyboth, M., Jenkins, T.J., Sewell, J.S., Van Norstand, J., Smorchkova, Y., Mishra, U.K.

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Severe Hypocalcemia Associated With Denosumab in Metastatic Castration-Resistant Prostate Cancer: Risk Factors and Precautions for Treating Physicians von Autio, Karen A, Farooki, Azeez, Glezerman, Ilya G, Chan, Amelia, Schneider, Coursen W, Barr, Hallie C, Seyboth, Brian M, Kampel, Lewis J, Danila, Daniel C, Rathkopf, Dana E, Slovin, Susan F, Scher, Howard I, Morris, Michael J

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Absorption and light scattering in InGaN-on-sapphire- and AlGaInP-based light-emitting diodes von Sven-Silvius Schad, Neubert, B., Eichler, C., Scherer, M., Habel, F., Seyboth, M., Scholz, F., Hofstetter, D., Unger, P., Schmid, W., Karnutsch, C., Streubel, K.

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First AlGaN/GaN MOSFET with photoanodic gate dielectric von Mistele, D, Rotter, T, Röver, K.S, Paprotta, S, Seyboth, M, Schwegler, V, Fedler, F, Klausing, H, Semchinova, O.K, Stemmer, J, Aderhold, J, Graul, J

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Determination of dislocation density in epitaxially grown GaN using an HCl etching process von Habel, F., Seyboth, M.

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Low resistive p -type GaN using two-step rapid thermal annealing processes von Scherer, M., Schwegler, V., Seyboth, M., Kirchner, C., Kamp, M., Pelzmann, A., Drechsler, M.

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Multiple-step annealing for 50% enhanced p-conductivity of GaN von Chung, H.Y.A., Pelzmann, A., Drechsler, M., Scherer, M, Schwegler, V., Seyboth, M., Kirchner, C., Kamp, M.

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Fosaprepitant use in children and adolescents at Memorial Sloan Kettering Cancer Center von Liu, Dazhi, Horiates, Krisoula, Mathew, Sherry, Pozotrigo, Melissa, Thackray, Jennifer, Kussin, Michelle, Yan, Shirley Qiong, Seyboth, Brian M., Modak, Shakeel

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Characterization of etched facets for GaN-based lasers von Scherer, M., Schwegler, V., Seyboth, M., Eberhard, F., Kirchner, C., Kamp, M., Ulu, G., Ünlü, M.S., Gruhler, R., Hollricher, O.

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First ALGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide von Rotter, T, Mistele, D, Stemmer, J, Seyboth, M, Schwegler, V, Paprotta, S, Fedler, F, Klausing, H, Semchinova, O K, Aderhold, J, Graul, J

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Argon plasma etching of gallium nitride: spectroscopic surprises von Brown, S A, Reeves, R J, Rong, B, Cheung, R, Seyboth, M, Kirchner, C, Kamp, M

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Correlation of Surface Potential, Free Carrier Concentration and Light Emission in ELO GaN Growth Domains von Haboeck, U., Kaschner, A., Hoffmann, A., Thomsen, C., Riemann, T., Krtschil, A., Christen, J., Krost, A., Seyboth, M., Habel, F.

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Extraction Efficiency of GaN-Based LEDs von Schad, S.S., Scherer, M., Seyboth, M., Schwegler, V.

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Influence of polarization on the properties of GaN based FET structures von Neuburger, M., Daumiller, I., Kunze, M., Seyboth, M., Jenkins, T., Van Nostrand, J., Kohn, E.

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Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance von Schwegler, V., Schad, S. S., Kirchner, C., Seyboth, M., Kamp, M., Ebeling, K. J., Kudryashov, V. E., Turkin, A. N., Yunovich, A. E., Stempfle, U., Link, A., Limmer, W., Sauer, R.

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GaN/SiC Quasi-Substrates for GaN-Based LEDs von Schwegler, V., Kirchner, C., Seyboth, M., Kamp, M., Ebeling, K. J., Melnik, Yu. V., Nikolaev, A. E., Tsvetkov, D., Dmitriev, V. A.

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Risk assessment for severe hypocalcemia requiring hospitalization with denosumab von Autio, Karen A., Farooki, Azeez, Glezerman, Ilya, Chan, Amelia, Barr, Hallie C., Seyboth, Brian M., Schneider, Coursen Walker, Heller, Glenn, Scher, Howard I., Morris, Michael J.

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Three-Dimensional Imaging of ELOG Growth Domains by Scanning Cathodoluminescence Tomography von Riemann, T., Christen, J., Kaschner, A., Hoffmann, A., Thomsen, C., Seyboth, M., Habel, F., Beccard, R., Heuken, M.

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Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure von Chung, H.Y.A., Wang, C., Kirchner, Ch, Seyboth, M., Schwegler, V., Scherer, M., Kamp, M., Ebeling, K.J.E., Beccard, R., Heuken, M.

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Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy von Wang, Chengxin, Anthony Chung, Hinyiu, Seyboth, Matthias, Kamp, Markus, Joachim Ebeling, Karl, Beccard, Rainer, Heuken, Michael

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